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Curriculum Vitae

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Charalampos Dimitriadis

Professor Emeritus (Retired), School of Physics

Personal Information

- 2310998094
- 2310998094
cdimitri@auth.gr
Scopus ID7007005019
Γνωστικό Αντικείμενο:
Ηλεκτρονικές ιδιότητες ημιαγωγών και ημιαγωγικών διατάξεων
Επιστημονική Ειδίκευση: ΦυσικήΜικροηλεκτρονική/Νανοηλεκτρονική

Education

Προπτυχιακές Σπουδές

1974	πτυχίο Φυσικής/ΣΘΕ ΑΠΘ Greece

Μεταπτυχιακές Σπουδές

1976	MSc Electrical Engineering University of Manchaster Institute of Science and Technology Great Britain Solid state electronics

Διδακτορικό Δίπλωμα

1979	PhD Electrical Engineering University of Manchaster Institute of Science and Technology Great Britain Solid state electronics

Course Work

Courses of Winter semester of 2017–18 academic year

	TMĪMA FYSIKĪS
ΓΘΥ201	Physics I (Mechanics)
ΣΥΕ206	Physics and technology of semiconductor devices

	TMĪMA IATRIKĪS
ΙΑ0344	Surgery
ΙΑ0346	Surgery II

	METAPTYCΗIAKO TMĪMATOS FYSIKĪS
ΜΗΦ745	TECHNOLOGY OF SEMICONDUCTOR DEVICES
ΜΦΥ652	PHYSICAL PROPERTIES OF MATERIALS

Courses of Spring semester of 2017–18 academic year

	TMĪMA IATRIKĪS
ΙΑ0344	Surgery
ΙΑ0345	Surgery I

Theses Supervised

Student Theses within AUTh

In progress

Oproglidis Theodoros. "Τρανζίστορ MOSFET νανοσυρμάτων τριπλής πύλης χωρίς ανορθωτικές επαφές και Ω-πύλης με ανορθωτικές επαφές", Εξειδίκευση σε: "Τρανζίστορ MOSFET νανοσυρμάτων τριπλής πύλης χωρίς ανορθωτικές επαφές: Συμπαγή μοντέλα και εφαρμογή σε προσομοίωση κυκλωμάτων"

2016–2017

Karatsori Theano. "Ηλεκτρικός χαρακτηρισμός και ανάπτυξη μοντέλων προηγμένων MOSFET νανοκλίμακας υπέρλεπτου υμενίου και εμφυτευμένου οξειδίου και εφαρμογή σε προσομοίωση κυκλωμάτων"

2014–2015

Koukouritaki Zampia. Η επίδραση της χορήγησης ω-3 λιπαρών οξέων και αντιοξειδωτικών στην ισχαιμική εντερίτιδα. Πειραματική μελέτη σε επίμυες
Fasarakīs Nikolaos. "Νανο-τρανζίστορ MOSFET πολλαπλών πυλών: Συμπαγή μοντέλα ρεύματος και θορύβου για ανάπτυξη εργαλείων αυτοματοποιημένου σχεδιασμού νανο-ηλεκτρονικών"

2013–2014

Messaris Ioannis. "Μοντελοποίηση του FinFET τριπλής πύλης νανοκλίμακας σε Verilog-A"
THeodōrou CΗristoforos. "Θόρυβος χαμηλών συχνοτήτων σε προηγμένες CMOS/SOI διατάξεις πολλαπλών πυλών νανοδιαστάσεων και μοντέλα θορύβου για εφαρμογές σε ηλεκτρονικά κυκλώματα"
Iōannidīs Eleutherios. "Μελέτη θορύβου χαμηλών συχνοτήτων σε CMOS διατάξεις κάτω από 45nm, αναλυτικά και συμπαγή μοντέλα θορύβου και εφαρμογές"

2012–2013

Palabougioukīs Orestīs. "Inductor characterization and VCO design in 65nm CMOS"

2010–2011

Lamprou Ioannis. Η επίδραση της αυξητικής ορμόνης στην επούλωση αναστόμωσης του παχέος εντέρου σε επίμυες υπό χημειοθεραπεία με 5- φθοριοουρακίλη (5-FU, μπλεομυκίνη και σισπλατίνη
Fasarakis Nikolaos. "Ενοποιημένο μοντέλο τάσης κατωφλίου, σε διατάξεις FinFET νανο-διαστάσεων"

Research Projects

2014–2015	Συμπαγή μοντέλα αναδυόμενων MOSFET πολλαπλών πυλών νανο-κλίμακας και εργαλεία προσομοίωσης αξιοπιστίας για σχεδίασμό κυκλωμάτων αναλογικού και μικτού σήματος κυκλωμάτων.
2012–2014	Τρανζίστορ λεπτών υμενίων ημιαγωγικών οξειδίων για εύκαμπτα CMOS ηλεκτρονικά μεγάλης κλίμακας
2011–2011	Συνέδριο: "Σύγχρονες εξελίξεις στη νανο-ηλεκτρονική"
2011–2014	ΣΥΝΕΡΓΑΣΙΑ 2009 / 09ΣΥΝ-42-998 / ΝΑΝΟ-ΣΥΜΠΡΑΞΗ / Νανο-τρανζίστορ MOSFET πολλαπλών πυλών: Συμπαγή μοντέλα ρεύματος και θορύβου-Ανάπτυξη εργαλείων αυτοματοποιημένου σχεδιασμού νανο-ηλεκτρονικών
2006–2008	Βελτιστοποίηση της απόδοσης και αξιοπιστία φωτοανιχνευτών μακρού υπερύθρου κβαντικών σημείων InGaAs στο GaAs
2005–2007	Ανάπτυξη και χαρακτηρισμός νανοκρυστάλλων ημιαγωγικού πυριτιδίου β-FeSi2 σε πυρίτιο
2004–2006	Μελέτη ατελειών σε ανορθωτικές επαφές ανθρακούχου πυριτίου SiC δημιουργημένες με την επίδραση σωματιδιακής ακτινοβολίας
2004–2009	Μελέτη βαλλιστικών νανοτρανζίστορ MOSFET και τρανζίστορ λεπτών υμενίων μικροκρυσταλλικού πυριτίου βιομηχανικής παραγωγής
2004–2006	ΠΥΘΑΓΟΡΑΣ: Μελέτη και ανάπτυξη μοντέλων τρανζίστορ TFT's - Σχεδιασμός και ανάπτυξη συσσωρευτών ιόντων Li για την τροφοδοσία τους
2004–2007	ΠΥΘΑΓΟΡΑΣ ΚΕΝΤΡΙΚΗ ΔΡΑΣΗ 4.2(Φύλο)
2004–2007	ΠΥΘΑΓΟΡΑΣ ΚΕΝΤΡΙΚΗ ΔΡΑΣΗ (Περιβάλλον)
2004–2007	ΠΥΘΑΓΟΡΑΣ ΚΕΝΤΡΙΚΗ ΔΡΑΣΗ 2.2
2002–2004	Ηλεκτρικές ιδιότητες και θόρυβος χαμηλών συχνοτήτων δομών κβαντικών σημείων
2000–2001	Ανάπτυξη της τεχνολογίας λεπτών υμενίων άνθρακα τύπου αδάμαντα για εφαρμογές σε ηλεκτρονικές και επίπεδες οθόνες απεικόνισης
1998–2000	Μελέτη ηλεκτροφυσικών ιδιοτήτων τρανζίστορ λεπτών υμενίων πολυκρυσταλλικού πυριτίου
1997–	New emphasis
1996–1998	Ανάπτυξη της τεχνολογίας λεπτών υμενίων νιτριδίων τιτανίου σε υπόστρωμα πυριτίου για διάφορες εφαρμογές σε ηλεκτρονικές διατάξεις
1996–2005	Hot carrier effects in submicron MOSFETs
1991–	Ανάπτυξη και χαρακτηρισμός λεπτών υμενίων πυριτιδίων β-FeSi2 και Ti/W/Si2, σε υπόστρωμα πυριτίου για εφαρμογές στη μικροηλεκτρονική

Publications

2015

Without Type

Ioannidis E.G, Theodorou C.G, Karatsori T.A, Haendler S, Dimitriadis Charalampos, Ghibaudo G (2015). Drain-current flicker noise modeling in nMOSFETs from a 14-nm FDSOI technology. IEEE Transactions on Electron Devices.
Ioannidis E.G, Theodorou C.G, Haendler S, Josse E, Dimitriadis Charalampos, Ghibaudo G (2015). Impact of source-drain series resistance on drain current mismatch in advanced fully depleted SOI n-MOSFETs. IEEE Electron Device Letters.
Karatsori Theano A, Theodorou Christoforos G, Ioannidis Eleftherios G, Haendler Sebastien, Josse Emmanuel, Dimitriadis Charalampos, Ghibaudo Gerard (2015). Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction. Solid-State Electronics.
Karatsori Theano A, Tsormpatzoglou Andreas, Theodorou Christoforos G, Ioannidis Eleftherios G, Haendler Sebastien, Planes Nicolas, Ghibaudo Gerard, Dimitriadis Charalampos (2015). Analytical Compact Model for Lightly Doped Nanoscale Ultrathin-Body and Box SOI MOSFETs With Back-Gate Control. IEEE Transactions on Electron Devices.
Theodorou Christophoros G, Ioannidis Eleftherios G, Haendler Sebastien, Dimitriadis Charalampos, Ghibaudo Gerard (2015). Dynamic variability in 14 nm FD-SOI MOSFETs and transient simulation methodology. Solid-State Electronics.

Without Type

Ioannidis E.G, Theodorou Georgios, Haendler S, Joo M.-K, Josse E, Dimitriadis Charalampos, Ghibaudo G (2015). Low frequency noise statistical characterization of 14nm FDSOI technology node. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015.
Theodorou C.G, Haendler S, Planes N, Josse E, Dimitriadis Charalampos, Ghibaudo G (2015). New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFET. IEEE International Reliability Physics Symposium IRPS 2015.

2014

Without Type

Fasarakis N, Karatsori T.A, Tassis Dimitrios, Theodorou Georgios, Andrieu F, Faynot O, Ghibaudo G, Dimitriadis Charalampos (2014). Analytical modeling of threshold voltage and interface ideality factor of nanoscale ultrathin body and buried oxide SOI MOSFETs with back gate control. IEEE Transactions on Electron Devices.
Fasarakis N, Karatsori T.A, Tsormpatzoglou A, Tassis Dimitrios, Papathanasiou Konstantinos, Bucher M, Ghibaudo G, Dimitriadis Charalampos (2014). Compact modeling of nanoscale trapezoidal finFETs. IEEE Transactions on Electron Devices.
Ioannidis E.G, Haendler S, Theodorou Georgios, Lasserre S, Dimitriadis Charalampos, Ghibaudo G (2014). Evolution of low frequency noise and noise variability through CMOS bulk technology nodes from 0.5 μm down to 20 nm. Solid-State Electronics.
Ioannidis E.G, Theodorou C.G, Haendler S, Dimitriadis Charalampos, Ghibaudo G (2014). Impact of low-frequency noise variability on statistical parameter extraction in ultra-scaled CMOS devices. Electronics Letters.
Theodorou G, Ioannidis E.G.b , Andrieu F, Poiroux T, Faynot O, Dimitriadis Charalampos, Ghibaudo G (2014). Low-frequency noise sources in advanced UTBB FD-SOI MOSFETs. IEEE Transactions on Electron Devices.

Without Type

Ioannidis E.G, Haendler S, Theodorou Georgios, Planes N, Dimitriadis Charalampos, Ghibaudo G (2014). Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs. 44th European Solid-State Device Research Conference, ESSDERC 2014.
Tassis Dimitrios, Messaris I, Fasarakis N, Nikolaidis Spyridon, Ghibaudo G, Dimitriadis Charalampos (2014). Variability analysis-Prediction method for nanoscale triple gate FinFETs. 29th International Conference on Microelectronics, MIEL 2014.
Tsormpatzoglou A, Chastas Nikolaos, Hatalis M.K, Dimitriadis Charalampos (2014). Analytical unified drain current model of amorphous IGZO thin film transistors considering a Gaussian distribution of tail states. 29th International Conference on Microelectronics, MIEL 2014.
Tsormpatzoglou A, Chastas Nikolaos, Hatalis M.K, Dimitriadis Charalampos (2014). Parameter extraction methodology for amorphous IGZO thin film transistors. 29th International Conference on Microelectronics, MIEL 2014.

2013

Without Type

Bontzios YI, Dimopoulos MG, Dimitriadis Charalampos, Chatzopoulos Alkiviadis (2013). Exact closed-form expressions for substrate resistance and capacitance extraction in nanoscale VLSI. Microelectronics Journal. vol.44 no.12 p.1077-1083.
Ioannidis E.G, Haendler S, Dimitriadis Charalampos, Ghibaudo G (2013). Characterization and modeling of low frequency noise in CMOS inverters. Solid-State Electronics.
Ioannidis E.G, Haendler S, Manceau J.-P, Dimitriadis Charalampos, Ghibaudo G (2013). Impact of dynamic variability on the operation of CMOS inverter. Electronics Letters.
Moschou D.C, Theodorou C.G, Chastas Nikolaos, Tsormpatzoglou A, Kouvatsos D.N, Voutsas A.T, Dimitriadis Charalampos (2013). Short channel effects on LTPS TFT degradation. IEEE/OSA Journal of Display Technology.
Theodorou G, fasarakis N, Hoffman T, Chiarella T, Ghibaudo G, Dimitriadis Charalampos (2013). Origin of the low-frequency noise in n-channel FinFETs. Solid-State Electronics.
Tsormpatzoglou A, Chastas Nikolaos, Mahmoudabadi F, Choi N, Hatalis M.K, Dimitriadis Charalampos (2013). Characterization of high-current stress-induced instability in amorphous InGaZnO thin-film transistors by low-frequency noise measurements. IEEE Electron Device Letters.
Tsormpatzoglou A, Chastas Nikolaos, Choi N, Mahmoudabadi F, Hatalis M. K, Dimitriadis Charalampos (2013). Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors. Journal of Applied Physics. vol.114 no.18 p.184502.

Without Type

Fasarakis N, Tassis Dimitrios, Tsormpatzoglou A, Papathanasiou Konstantinos, Dimitriadis Charalampos, Ghibaudo G (2013). Compact modeling of nano-scale trapezoidal cross-sectional FinFETs. 2013 IEEE International Semiconductor Conference Dresden - Grenoble.
Ioannidis E.G, Haendler S, Bajolet A, Rosa J, Manceau J.-P, Dimitriadis Charalampos, Ghibaudo G (2013). Evolution of low frequency noise and noise variability through CMOS bulk technology nodes. 22nd International Conference on Noise and Fluctuations, ICNF 2013.
Tassis Dimitrios, Fasarakis N, Dimitriadis Charalampos, Ghibaudo G (2013). Variability analysis - Prediction method for nanoscale triple gate FinFETs. 2013 IEEE International Semiconductor Conference Dresden - Grenoble.
Theodorou Georgios, Ioannidis E.G, Andrieu F, Poiroux T, Faynot O, Dimitriadis Charalampos, Ghibaudo G (2013). Low-frequency noise behavior of n-channel UTBB FD-SOI MOSFETs. 22nd International Conference on Noise and Fluctuations, ICNF 2013.

2012

Without Type

Fasarakis N, Tsormpatzoglou A, Tassis D. H, Pappas I, Papathanasiou K, Bucher M, Ghibaudo G, Dimitriadis C. A (2012). Compact model of drain current in short-channel triple-gate FinFETs. Ieee Transactions on Electron Devices. vol.59 no.7 p.1891-1898.
Fasarakis N, Tsormpatzoglou A, Tassis D. H, Pappas I, Papathanasiou K, Bucher M, Ghibaudo G, Dimitriadis C. A (2012). Compact Capacitance Model of Undoped or Lightly Doped Ultra-Scaled Triple-Gate FinFETs. Ieee Transactions on Electron Devices. vol.59 no.12 p.3306-3312.
Ioannidis E. G, Dimitriadis C. A, Haendler S, Bianchi R. A, Jomaah J, Ghibaudo G (2012). Improved analysis and modeling of low-frequency noise in nanoscale MOSFETs. Solid-State Electronics. vol.76 p.54-59.
Papathanasiou K, Theodorou C. G, Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Bucher M, Ghibaudo G (2012). Symmetrical unified compact model of short-channel double-gate MOSFETs. Solid-State Electronics. vol.69 p.55-61.
Theodorou C. G, Fasarakis N, Hoffman T, Chiarella T, Ghibaudo G, Dimitriadis C. A (2012). Flicker noise in n-channel nanoscale tri-gate fin-shaped field-effect transistors. Applied Physics Letters. vol.101 no.24.
Tsormpatzoglou A, Pappas I, Tassis D. H, Dimitriadis C. A, Ghibaudo G (2012). Analytical threshold voltage model for short-channel asymmetrical dual-gate material double-gate MOSFETs. Microelectronic Engineering. vol.90 p.9-11.
Tsormpatzoglou A, Papathanasiou K, Fasarakis N, Tassis D. H, Ghibaudo G, Dimitriadis C. A (2012). A Lambert-Function Charge-Based Methodology for Extracting Electrical Parameters of Nanoscale FinFETs. Ieee Transactions on Electron Devices. vol.59 no.12 p.3299-3305.
Tsormpatzoglou A, Hastas N. A, Khan S, Hatalis M, Dimitriadis C. A (2012). Comparative study of active-over-metal and metal-over-active amorphous IGZO thin-film transistors with low-frequency noise measurements. IEEE Electron Device Letters. vol.33 no.4 p.555-557.

2011

Without Type

Christou I. T, Bakopoulos M, Dimitriou T, Amolochitis E, Tsekeridou S, Dimitriadis C (2011). Detecting fraud in online games of chance and lotteries. Expert Systems with Applications. vol.38 no.10 p.13158-13169.
Fasarakis N, Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Papathanasiou K, Jomaah J, Ghibaudo G (2011). Analytical unified threshold voltage model of short-channel FinFETs and implementation. Solid-State Electronics.
Hastas N. A, Arpatzanis N, Dimitriadis C. A, Brochet J, Templier F, Kamarinos G (2011). Hysteresis effect in bottom-gate polymorphous silicon thin-film transistors. Microelectronics Reliability. vol.51 no.3 p.556-559.
Ioannidis E. G, Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Ghibaudo G, Jomaah J (2011). Effect of localized interface charge on the threshold voltage of short-channel undoped symmetrical double-gate MOSFETs. Ieee Transactions on Electron Devices. vol.58 no.2 p.433-440.
Kimura M, Dimitriadis C. A (2011). Characteristic degradation of poly-Si thin-film transistors with large grains from the viewpoint of grain boundary location. Ieee Transactions on Electron Devices. vol.58 no.6 p.1748-1751.
Kimura M, Dimitriadis C (2011). Dependence of off-leakage current on channel film quality in poly-Si thin-film transistors and analysis using device simulation. Solid-State Electronics. vol.57 no.1 p.87-89.
Theodorou C. G, Tsormpatzoglou A, Dimitriadis C. A, Khan S. A, Hatalis M. K, Jomaah J, Ghibaudo G (2011). Origin of low-frequency noise in the low drain current range of bottom-gate amorphous IGZO thin-film transistors. IEEE Electron Device Letters. vol.32 no.7 p.898-900.
Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Ghibaudo G, Collaert N, Pananakakis G (2011). Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs. Solid-State Electronics. vol.57 no.1 p.31-34.

Without Type

Ioannidis E. G, Haendler S, Bajolet A, Pahron T, Planes N, Arnaud F, Bianchi R. A, Haond M, Golanski D, Rosa J, Fenouillet-Beranger C, et al (2011). Low frequency noise variability in high-k/metal gate stack 28nm bulk and FD-SOI CMOS transistors. p.18.6.1-18.6.4.
Molnar G, Dozsa L, Vértesy Z, Koós A. A, Vouroutzis Nikolaos, Dimitriadis Charalampos, Paraskevopoulos Konstantinos (2011). Reactive deposition epitaxy growth of iron silicide nanoparticles on Si(001). Energy Procedia, EMRS-C ‘Materials devices and economics issues for tomorrow’s photovoltaics’. E-MRS Fall Meeting 2010, Symposium C, EMRS-C "Materials devices and economics issues for tomorrow’s photovoltaics". Central Campus of Warsaw University of Technology, Poland. vol.3 p.35-41.

2010

Without Type

Ioannidis E. G, Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Templier F, Kamarinos G (2010). Characterization of traps in the gate dielectric of amorphous and nanocrystalline silicon thin-film transistors by 1/f noise. Journal of Applied Physics. vol.108 no.10.
Ioannidis E. G, Theodorou C. G, Tsormpatzoglou A, Tassis D. H, Papathanasiou K, Dimitriadis C. A, Jomaah J, Ghibaudo G (2010). Analytical low-frequency noise model in the linear region of lightly doped nanoscale double-gate metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics. vol.108 no.6.
Pappas I, Siskos S, Dimitriadis C. A (2010). Polycrystalline silicon TFTs threshold voltage compensated bias current generator for analog circuit design. IEEE/OSA Journal of Display Technology. vol.6 no.12 p.633-638.
Pappas I, Siskos S, Dimitriadis C. A (2010). A new threshold-voltage compensation technique of poly-Si TFTs for AMOLED display pixel circuits. Journal of the Society for Information Display. vol.18 no.10 p.721-731.
Tassis D. H, Tsormpatzoglou A, Dimitriadis C. A, Ghibaudo G, Pananakakis G, Collaert N (2010). Source/drain optimization of underlapped lightly doped nanoscale double-gate MOSFETs. Microelectronic Engineering. vol.87 no.11 p.2353-2357.
Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Ghibaudo G, Pananakakis G, Collaert N (2010). Analytical modelling for the current-voltage characteristics of undoped or lightly-doped symmetric double-gate MOSFETs. Microelectronic Engineering. vol.87 no.9 p.1764-1768.
Valachis A, Tsali L, Pesce L. L, Polyzos N. P, Dimitriadis C, Tsalis K, Mauri D (2010). Safety of pregnancy after primary breast carcinoma in young women: A meta-analysis to overcome bias of healthy mother effect studies. Obstetrical and Gynecological Survey. vol.65 no.12 p.786-793.

Without Type

Pappas I, Tassis D, Siskos S, Dimitriadis C. A (2010). Characteristics of double-gate polycrystalline silicon thin-film transistors for AMOLED pixel design. International Conference on Electronics, Circuits, and Systems. Athens, Greece. p.301-304.
Pappas I, Siskos S, Dimitriadis C (2010). P-31: A new threshold voltage compensation technique of poly-Si TFTs for AMOLED display pixel circuit. Society for Information Display's Display Week 2010, (SID 2010). Seattle, WA, USA. vol.3 p.1336-1339.

2009

Without Type

Arpatzanis N, Hastas N. A, Dimitriadis C. A, Konstantinidis G, Charitidis C, Song J. D, Choi W. J, Lee J. I (2009). Rapid thermal annealing temperature dependence of noise properties in Au/n-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In0.2 Ga0.8 As wells. Physica Status Solidi (B) Basic Research. vol.246 no.4 p.880-884.
Hastas N. A, Dimitriadis C. A, Gombia E, Frigeri P, Franchi S, Mosca R (2009). Investigation of generation-recombination centres of Au/n-GaAs Schottky diodes with InAs self-assembled quantum dots. Materials Science and Engineering B: Solid-State Materials for Advanced Technology. vol.165 no.3 p.169-172.
Pappas I, Ghibaudo G, Dimitriadis C. A, Fenouillet-B.ranger C (2009). Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices. Solid-State Electronics. vol.53 no.1 p.54-56.
Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Mouis M, Ghibaudo G, Collaert N (2009). Electrical characterization and design optimization of FinFETs with a TiN/HfO2 gate stack. Semiconductor Science and Technology. vol.24 no.12.
Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Ghibaudo G, Pananakakis G, Clerc R (2009). A compact drain current model of short-channel cylindrical gate-all-around MOSFETs. Semiconductor Science and Technology. vol.24 no.7.
Tsormpatzoglou A, Dimitriadis C. A, Mouis M, Ghibaudo G, Collaert N (2009). Experimental characterization of the subthreshold leakage current in triple-gate FinFETs. Solid-State Electronics. vol.53 no.3 p.359-363.

Without Type

Pappas I, Theodorou C, Siskos S, Dimitriadis C. A (2009). A new linear voltage-to-current converter with threshold voltage compensation for analog circuits applications in polycrystalline silicon TFT process. 16th IEEE International Conference on Electronics Circuits and Systems. Hammamet, Tunisia. p.599-602.

2008

Without Type

Archontas N, Georgoulas N, Dimitriadis C. A, Templier F, Oudwan M, Kamarinos G (2008). Two dimensional simulation and modeling of the electrical behavior in nanocrystalline silicon thin-film transistors. Journal of Applied Physics. vol.103 no.10.
Arpatzanis N, Hatzopoulos A. T, Tassis D. H, Dimitriadis C. A, Templier F, Oudwan M, Kamarinos G (2008). Degradation of n-channel a-Si:H/nc-Si:H bilayer thin-film transistors under DC electrical stress. Microelectronics Reliability. vol.48 no.4 p.531-536.
Arpatzanis N, Hastas N. A, Dimitriadis C. A, Charitidis C, Song J. D, Choi W. J, Lee J. I (2008). Ideality factor dependence of capacitance and reverse current noise in Au/n-GaAs Schottky diodes with embedded self-assembled InAs quantum dots. Physica Status Solidi (C) Current Topics in Solid State Physics. vol.5 no.12 p.3617-3621.
Charitidis C. A, Golnas A, Chouliaras F, Arpatzanis N, Dimitriadis C. A, Lee J. I, Bakolias C (2008). QD technology and market prospects in the sectors of space exploration, biomedicine, defense, and security. Physica Status Solidi (C) Current Topics in Solid State Physics. vol.5 no.12 p.3872-3876.
Hatzopoulos A. T, Tassis D. H, Arpatzanis N, Dimitriadis C. A, Templier F, Oudwan M, Kamarinos G (2008). Stability of n -channel a-Si:Hnc-Si:H bilayer thin-film transistors under dynamic stress. Journal of Applied Physics. vol.103 no.8.
Ivanov V. Yu, Godlewski M, Kalabukhova E. N, Dimitriadis C. A, Zekentes K (2008). Photoluminescence and optically detected magnetic resonance investigations of wurtzite phase 4H-SiC. Optical Materials. vol.30 no.5 p.746-748.
Pappas I, Siskos S, Ghibaudo G, Dimitriadis C. A (2008). Comparison of two analog buffers implemented with low-temperature polysilicon thin-film transistors for active matrix displays applications. Physica Status Solidi (C) Current Topics in Solid State Physics. vol.5 no.12 p.3854-3857.
Pappas I, Siskos S, Dimitriadis C. A (2008). A fast and compact analog buffer design for active matrix liquid crystal displays using polysilicon thin-film transistors. IEEE Transactions on Circuits and Systems II: Express Briefs. vol.55 no.6 p.537-540.
Pappas I, Dimitriadis C. A, Siskos S, Templier F, Oudwan M, Kamarinos G (2008). Effect of channel width shortening on the stability of a-Si:H/nc-Si:H bilayer thin-film transistors. IEEE Electron Device Letters. vol.29 no.8 p.873-875.
Tsormpatzoglou A, Dimitriadis C. A, Clerc R, Pananakakis G, Ghibaudo G (2008). Threshold voltage model for short-channel undoped symmetrical double-gate MOSFETs. Ieee Transactions on Electron Devices. vol.55 no.9 p.2512-2516.
Tsormpatzoglou A, Dimitriadis C. A, Clerc R, Pananakakis G, Ghibaudo G (2008). Semi-analytical modelling of short channel effects in Si double gate, tri-gate and gate all-around MOSFETs. Physica Status Solidi (C) Current Topics in Solid State Physics. vol.5 no.12 p.3605-3608.
Tsormpatzoglou A, Dimitriadis C. A, Clerc R, Pananakakis G, Ghibaudo G (2008). Semianalytical modeling of short-channel effects in lightly doped silicon trigate MOSFETs. Ieee Transactions on Electron Devices. vol.55 no.10 p.2623-2631.
Vouroutzis N, Zorba T. T, Dimitriadis C. A, Paraskevopoulos K. M, Dózsa L, Molnár G (2008). Growth of β-FeSi2 particles on silicon by reactive deposition epitaxy. Journal of Alloys and Compounds. vol.448 no.1-2 p.202-205.

Without Type

Papadopoulos N. P, Chatzopoulos Alkiviadis, Papakostas D. K, Picos Rodrigo, Siskos S, Dimitriadis C. A (2008). Universal LightImpact Model for p-type and n-type poly-TFT. International Symposium on flexible organic electronics (ISFOE 2008). Halkidiki.

2007

Without Type

Arpatzanis N, Tsormpatzoglou A, Dimitriadis C. A, Song J. D, Choi W. J, Lee J. I, Charitidis C (2007). Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures. Journal of Applied Physics. vol.102 no.5.
Arpatzanis N, Tassis D. H, Dimitriadis C. A, Charitidis C, Song J. D, Choi W. J, Lee J. I (2007). Current-voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots. Semiconductor Science and Technology. vol.22 no.10 p.1086-1091.
Hatzopoulos A. T, Arpatzanis N, Tassis D. H, Dimitriadis C. A, Templier F, Oudwan M, Kamarinos G (2007). Stability of amorphous-silicon and nanocrystalline silicon thin-film transistors under DC and AC stress. IEEE Electron Device Letters. vol.28 no.9 p.803-805.
Hatzopoulos A. T, Arpatzanis N, Tassis D. H, Dimitriadis C. A, Templier F, Oudwan M, Kamarinos G (2007). Effect of channel width on the electrical characteristics of amorphous/ nanocrystalline silicon bilayer thin-film transistors. Ieee Transactions on Electron Devices. vol.54 no.5 p.1265-1269.
Hatzopoulos A. T, Arpatzanis N, Tassis D. H, Dimitriadis C. A, Templier F, Oudwan M, Kamarinos G (2007). 1/f noise characterization of amorphous/nanocrystalline silicon bilayer thin-film transistors. Solid-State Electronics. vol.51 no.5 p.726-731.
Hatzopoulos A. T, Arpatzanis N, Tassis D. H, Dimitriadis C. A, Oudwan M, Templier F, Kamarinos G (2007). Study of the drain leakage current in bottom-gated nanocrystalline silicon thin-film transistors by conduction and low-frequency noise measurements. Ieee Transactions on Electron Devices. vol.54 no.5 p.1076-1082.
Pappas I, Siskos S, Dimitriadis C. A (2007). A new analog buffer using low-temperature polysilicon thin-film transistors for active-matrix displays. Ieee Transactions on Electron Devices. vol.54 no.2 p.219-224.
Pappas I, Dimitriadis C. A, Templier F, Oudwan M, Kamarinos G (2007). Above-threshold drain current model including band tail states in nanocrystalline silicon thin-film transistors for circuit implementation. Journal of Applied Physics. vol.101 no.8.
Tsormpatzoglou A, Dimitriadis C. A, Clerc R, Rafhay Q, Pananakakis G, Ghibaudo G (2007). Semi-analytical modeling of short-channel effects in Si and Ge symmetrical double-gate MOSFETs. Ieee Transactions on Electron Devices. vol.54 no.8 p.1943-1952.

2006

Without Type

Arpatzanis N, Tsormpatzoglou A, Dimitriadis C. A, Zekentes K, Camara N, Godlewski M (2006). Electrical and low frequency noise properties of H-SiC p +-n-n+ junction diodes. Physica Status Solidi (A) Applications and Materials. vol.203 no.10 p.2551-2557.
Arpatzanis N, Tassis D. H, Dimitriadis C. A, Zekentes K, Camara N (2006). Experimental investigation of noise in 4H-SiC p+-n-n+ junctions. Semiconductor Science and Technology. vol.21 no.5 p.591-593.
Hatzopoulos A. T, Tassis D. H, Arpatzanis N, Dimitriadis C. A, Kamarinos G (2006). Effects of hot carriers in offset gated polysilicon thin-film transistors. Microelectronics Reliability. vol.46 no.2-4 p.311-316.
Hatzopoulos A. T, Pappas I, Tassis D. H, Arpatzanis N, Dimitriadis C. A, Templier F, Oudwan M (2006). Analytical current-voltage model for nanocrystalline silicon thin-film transistors. Applied Physics Letters. vol.89 no.19.
Hatzopoulos A. T, Arpatzanis N, Tassis D. H, Dimitriadis C. A, Templier F, Oudwan M, Kamarinos G (2006). Electrical and noise characterization of bottom-gated nanocrystalline silicon thin-film transistors. Journal of Applied Physics. vol.100 no.11.
Papadopoulos N. P, Chatzopoulos Alkiviadis, Papakostas D. K, Dimitriadis C. A, Siskos S (2006). Modeling the impact of light on the performance of polycrystalline thin-film transistors at the sub-threshold region. Microelectronics Journal. vol.37 no.11 p.1313-1320.
Pappas I, Hatzopoulos A. T, Tassis D. H, Arpatzanis N, Siskos S, Dimitriadis C. A, Kamarinos G (2006). A simple and continuous polycrystalline silicon thin-film transistor model for SPICE implementation. Journal of Applied Physics. vol.100 no.6.
Tassis D. H, Hatzopoulos A. T, Arpatzanis N, Dimitriadis C. A, Kamarinos G (2006). Dynamic hot-carrier induced degradation in n-channel polysilicon thin-film transistors. Microelectronics Reliability. vol.46 no.12 p.2032-2037.
Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Kamarinos G, Frigeri P, Franchi S, Gombia E, Mosca R (2006). Noise spectroscopy of localized states in Au/n-GaAs Schottky diodes containing InAs quantum dots. Solid-State Electronics. vol.50 no.3 p.340-344.
Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Frigeri P, Franchi S, Gombia E, Mosca R (2006). Stress-induced local trap levels in Au/n-GaAs Schottky diodes with embedded InAs quantum dots. IEEE Electron Device Letters. vol.27 no.5 p.320-322.
Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Dózsa L, Galkin N. G, Goroshko D. L, Polyarnyi V. O, Chusovitin E. A (2006). Deep levels in silicon Schottky junctions with embedded arrays of Β-FeSi2 nanocrystallites. Journal of Applied Physics. vol.100 no.7.

Without Type

Arpatzanis N, Hatzopoulos A. T, Tassis D. H, Dimitriadis C. A, Kamarinos G (2006). Hot carrier effects in self-aligned and offset-gated polysilicon thin-film transistors. vol.888 p.353-358.
Pappas I, Nalpantidis L, Kalenteridis V, Siskos S, Hatzopoulos A. A, Dimitriadis C. A (2006). A threshold voltage variation cancellation technique for analogue peripheral circuits of a display array using Poly-Si TFTs. Proceedings - IEEE International Symposium on Circuits and Systems (ISCAS 2006). Kos, Greece. p.3305-3308.
Pappas I, Hatzopoulos A. T, Tassis D. H, Arpatzanis N, Siskos S, Hatzopoulos A. A, Dimitriadis C. A, Kamarinos G (2006). A simple polysilicon thin-film transistor SPICE model. 25th International Conference on Microelectronics (MIEL 2006). Belgrade, Serbia. p.513-516.
Templier F, Oudwan M, Venin C, Villette J, Elyaakoubi M, Dimitriadis C. A (2006). Development of nanocrystalline silicon thin film transistors with low-leakage and high stability for AMOLED displays. vol.2006 p.1705-1708.

2005

Without Type

Hastas N. A, Archontas N, Dimitriadis C. A, Kamarinos G, Nikolaidis T, Georgoulas N, Thanailakis A (2005). Substrate current and degradation of n-channel polycrystalline silicon thin-film transistors. Microelectronics Reliability. vol.45 no.2 p.341-348.
Hatzopoulos A. T, Tassis D. H, Hastas N. A, Dimitriadis C. A, Kamarinos G (2005). On-state drain current modeling of large-grain poly-si TFTs based on carrier transport through latitudinal and longitudinal grain boundaries. Ieee Transactions on Electron Devices. vol.52 no.8 p.1727-1733.
Hatzopoulos A. T, Tassis D. H, Hastas N. A, Dimitriadis C. A, Kamarinos G (2005). An analytical hot-carrier induced degradation model in polysilicon TFTs. Ieee Transactions on Electron Devices. vol.52 no.10 p.2182-2186.
Hatzopoulos A. T, Tassis D. H, Dimitriadis C. A, Kamarinos G (2005). Analytical on-state current model of polycrystalline silicon thin-film transistors including the kink effect. Applied Physics Letters. vol.87 no.6.
Koutsouras D. A, Hastas N. A, Tassis D. H, Dimitriadis C. A, Frigeri P, Franchi S, Gombia E, Mosca R (2005). Depth distribution of traps in Aun-GaAs Schottky diodes with embedded InAs quantum dots. Journal of Applied Physics. vol.97 no.6 p.1-6.
Peto G, Molnar G, Dozsa L, Horvath Z. E, Horvath Z. J, Zsoldos E, Dimitriadis C. A, Papadimitriou L (2005). Thickness dependent formation and properties of GdSi2/Si(100) interfaces. Applied Physics a-Materials Science & Processing. vol.81 no.5 p.975-980.
Tassis D. H, Hastas N. A, Dimitriadis C. A, Kamarinos G (2005). Improved analysis of low frequency noise in polycrystalline silicon thin-film transistors. Solid-State Electronics. vol.49 no.3 p.513-515.
Tsormpatzoglou A, Hastas N. A, Tassis D. H, Dimitriadis C. A, Kamarinos G, Frigeri P, Franchi S, Gombia E, Mosca R (2005). Low-frequency noise spectroscopy in Au/n-GaAs Schottky diodes with InAs quantum dots. Applied Physics Letters. vol.87 no.16 p.1-3.
Vouroutzis N, Zorba T. T, Dimitriadis C. A, Paraskevopoulos K. M, Dózsa L, Molnár G (2005). Thickness dependent structure of β-FeSi2 grown on silicon by solid phase epitaxy. Journal of Alloys and Compounds. vol.393 no.1-2 p.167-170.

2004

Without Type

Hastas N. A, Tassis D. H, Dimitriadis C. A, Dozsa L, Franchi, Frigeri P (2004). Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots. Semiconductor Science and Technology. vol.19 no.3 p.461-467.
Hastas N. A, Dimitriadis C. A, Kamarinos G (2004). Low-frequency noise in offset-gated polysilicon TFTs. Ieee Transactions on Electron Devices. vol.51 no.5 p.828-831.
Hastas N. A, Dimitriadis C. A, Kamarinos G (2004). Correlation of the generation-recombination noise with reliability issues of polycrystalline silicon thin-film transistors. Applied Physics Letters. vol.85 no.2 p.311-313.
Hastas N. A, Dimitriadis C. A, Dozsa L, Gombia E, Mosca R (2004). Investigation of single electron traps induced by InAs quantum dots embedded in GaAs layer using the low-frequency noise technique. Journal of Applied Physics. vol.96 no.10 p.5735-5739.
Hatzopoulos A, Dimitriadis C. A, Pananakakis G, Ghibaudo G, Kamarinos G (2004). Anomalous hot-carrier-induced degradation of offset gated polycrystalline silicon thin-film transistors. Applied Physics Letters. vol.84 no.16 p.3163-3165.
Hatzopoulos A, Archontas N, Hastas N. A, Dimitriadis C. A, Kamarinos G, Georgoulas N, Thanailakis A (2004). Change in transfer and low-frequency noise characteristics of n-channel polysilicon TFTs due to hot-carrier degradation. IEEE Electron Device Letters. vol.25 no.6 p.390-392.

Without Type

Hastas N. A, Dimitriadis C. A, Dozsa L, Gombia E, Kamarinos G (2004). Electrical properties of GaAs schottky diodes with embedded InAs self-assembled quantum dots. vol.24 I p.325-327.
Hatzopoulos A, Dimitriadis C. A, Pananakakis G, Ghibaudo G, Kamarinos G (2004). Hot-carrier induced degradation of offset gated polysilicon TFTs. vol.24 II p.693-695.

2003

Without Type

Dimitriadis C. A, Brini J, Kamarinos G (2003). Origin of low frequency noise in polycrystalline silicon thin-film transistors. Thin Solid Films. vol.427 no.1-2 p.113-116.
Gautier S, Komninou P, Patsalas P, Kehagias T, Logothetidis S, Dimitriadis C. A, Nouet G (2003). Optical and electrical properties of TiN/n-GaN contacts in correlation with their structural properties. Semiconductor Science and Technology. vol.18 no.6 p.594-601.
Hastas N. A, Tassis D. H, Dimitriadis C. A, Kamarinos G (2003). Determination of interface and bulk traps in the subthreshold region of polycrystalline silicon thin-film transistors. Ieee Transactions on Electron Devices. vol.50 no.9 p.1991-1994.
Hastas N. A, Tassis D. H, Dimitriadis C. A, Brini J, Kamarinos G (2003). Stability of hydrogenated in pure hydrogen plasma p-channel polycrystalline silicon thin-film transistors. Solid-State Electronics. vol.47 no.1 p.25-31.
Hastas N. A, Dimitriadis C. A, Farmakis F. V, Kamarinos G (2003). Effects of hydrogenation on the performance and stability of p-channel polycrystalline silicon thin-film transistors. Microelectronics Reliability. vol.43 no.4 p.671-674.
Hastas N. A, Dimitriadis C. A, Dozsa L, Gombia E, Mosca R (2003). Characterization of traps related to InAs quantum-dot growth-induced defects in GaAs by low-frequency noise measurements in reverse-biased Schottky diodes. Journal of Applied Physics. vol.93 no.9 p.5833-5835.
Hastas N. A, Dimitriadis C. A, Dozsa L, Gombia E, Amighetti S, Frigeri P (2003). Low frequency noise of GaAs Schottky diodes with embedded InAs quantum layer and self-assembled quantum dots. Journal of Applied Physics. vol.93 no.7 p.3990-3994.
Hastas N. A, Dimitriadis C. A, Brini J, Kamarinos G, Gueorguiev V. K, Kaschieva S (2003). Effects of gamma-ray irradiation on polycrystalline silicon thin-film transistors. Microelectronics Reliability. vol.43 no.1 p.57-60.
Popova L. I, Peneva S. K, Dimitriadis C. A, Gueorguiev V. K, Andreev S. K (2003). TEM structural characterization of Sn-Te-O thin films on monocrystalline silicon wafers. Thin Solid Films. vol.441 no.1-2 p.25-31.
Tsalis K. G, Christoforidis E. C, Dimitriadis C. A, Kalfadis S. C, Botsios D. S, Dadoukis J. D (2003). Management of bile duct injury during and after laparoscopic cholecystectomy. Surgical Endoscopy and Other Interventional Techniques. vol.17 no.1 p.31-37.

2002

Without Type

Dimitriadis C. A, Farmakis F. V, Kamarinos G, Brini J (2002). Origin of low-frequency noise in polycrystalline silicon thin-film transistors. Journal of Applied Physics. vol.91 no.12 p.9919.
Hastas N. A, Dimitriadis C. A, Panayiotatos Y, Tassis D. H, Logothetidis S, Papadimitriou D, Roupakas G, Adamopoulos G (2002). High-field transport and noise properties of sputter-deposited amorphous carbon-silicon heterojunctions. Semiconductor Science and Technology. vol.17 no.7 p.662-667.
Hastas N. A, Dimitriadis C. A, Kamarinos G (2002). Effect of interface roughness on gate bias instability of polycrystalline silicon thin-film transistors. Journal of Applied Physics. vol.92 no.8 p.4741.
Hastas N. A, Dimitriadis C. A, Brini J, Kamarinos G (2002). Hot-carrier-induced degradation in short p-channel nonhydrogenated polysilicon thin-film transistor. Ieee Transactions on Electron Devices. vol.49 no.9 p.1552-1557.
Konofaos N, Evangelou E. K, Hastas N. A, Panayiotatos Y, Dimitriadis C. A, Logothetidis S (2002). The effects of interface and bulk defects on the electrical performance of amorphous carbon/silicon heterojunctions. Materials Science and Engineering B-Solid State Materials for Advanced Technology. vol.91-92 p.379-383.
Papadimitriou D, Roupakas G, Xu C, Topalidou A, Panayiotatos Y, Dimitriadis C. A, Logothetidis S (2002). Raman and photoluminescence study of magnetron sputtered amorphous carbon films. Thin Solid Films. vol.414 no.1 p.18-24.
Papadimitriou D, Roupakas G, Dimitriadis C. A, Logothetidis S (2002). Raman scattering and photoluminescence of nitrogenated amorphous carbon films. Journal of Applied Physics. vol.92 no.2 p.870-875.
Papatzika S, Hastas N. A, Angelis C. T, Dimitriadis C. A, Kamarinos G, Lee J. I (2002). Investigation of noise sources in platinum silicide Schottky barrier diodes. Applied Physics Letters. vol.80 no.8 p.1468-1470.

Without Type

Hastas N. A, Dimitriadis C. A, Kamarinos G (2002). Stability of non-hydrogenated and hydrogenated p-channel polycrystalline silicon thin-film transistors. vol.744 p.457-462.

2001

Without Type

Dimitriadis C. A, Kamarinos G, Brini J (2001). Model of low frequency noise in polycrystalline silicon thin-film transistors. IEEE Electron Device Letters. vol.22 no.8 p.381-383.
Dimitriadis C. A, Kamarinos G, Brini J (2001). Leakage current of offset gate p- and n-channel excimer laser annealed polycrystalline silicon thin-film transistors. Solid-State Electronics. vol.45 no.2 p.365-368.
Dimitriadis C. A, Hastas N. A, Vouroutzis N, Logothetidis S, Panayiotatos Y (2001). Microstructure and its effect on the conductivity of magnetron sputtered carbon thin films. Journal of Applied Physics. vol.89 no.12 p.7954-7959.
Farmakis F. V, Tsamados D. M, Brini J, Kamarinos G, Dimitriadis C. A, Miyasaka M (2001). Hydrogenation in laser annealed polysilicon thin-film transistors (TFTs). Thin Solid Films. vol.383 no.1-2 p.151-153.
Farmakis F. V, Dimitriadis C. A, Brini J, Kamarinos G (2001). Effects of hydrogenation on the performance and hot-carrier endurance of polysilicon thin-film transistors. IEEE Electron Device Letters. vol.22 no.2 p.83-85.
Farmakis F. V, Brini J, Kamarinos G, Dimitriadis C. A (2001). Anomalous turn-on voltage degradation during hot-carrier stress in polycrystalline silicon thin-film transistors. IEEE Electron Device Letters. vol.22 no.2 p.74-76.
Farmakis F. V, Brini J, Kamarinos G, Angelis C. T, Dimitriadis C. A, Miyasaka M (2001). On-current modeling of large-grain polycrystalline silicon thin-film transistors. Ieee Transactions on Electron Devices. vol.48 no.4 p.701-706.
Gueorguiev V. K, Ivanov Tz E, Dimitriadis C. A, Andreev S. K, Popova L. I (2001). Time-dependent-dielectric-breakdown of hydrogen implanted polyoxides. Microelectronics Journal. vol.32 no.4 p.301-304.
Hastas N. A, Dimitriadis C. A, Tassis D. H, Panayiotatos Y, Logothetidis S, Papadimitriou D (2001). Electrical properties of magnetron sputtered amorphous carbon films with sequential sp(3)-rich/sp(2)-rich layered structure. Applied Physics Letters. vol.79 no.20 p.3269-3271.
Hastas N. A, Dimitriadis C. A, Tassis D. H, Logothetidis S (2001). Electrical characterization of nanocrystalline carbon-silicon heterojunctions. Applied Physics Letters. vol.79 no.5 p.638-640.
Hastas N. A, Dimitriadis C. A, Patsalas P, Panayiotatos Y, Tassis D. H, Logothetidis S (2001). Structural, electrical, and low-frequency-noise properties of amorphous-carbon-silicon heterojunctions. Journal of Applied Physics. vol.89 no.5 p.2832-2838.
Hastas N. A, Dimitriadis C. A, Logothetidis S, Angelis C. T, Konofaos N, Evangelou E. K (2001). Temperature dependence of the barrier at the tetrahedral amorphous carbon-silicon interface. Semiconductor Science and Technology. vol.16 no.6 p.474-477.
Konofaos N, Angelis C. T, Evangelou E. K, Panayiotatos Y, Dimitriadis C. A, Logothetidis S (2001). Electrical characterization of TiN/a-C/Si devices grown by magnetron sputtering at room temperature. Applied Physics Letters. vol.78 no.12 p.1682-1684.
Konofaos N, Angelis C. T, Evangelou E. K, Dimitriadis C. A, Logothetidis S (2001). Charge carrier response time in sputtered a-C/n-Si heterojunctions. Applied Physics Letters. vol.79 no.15 p.2381-2383.

Without Type

Farmakis F. V, Tsamados D. M, Brini J, Kamarinos G, Dimitriadis C. A (2001). Electrical and noise characterization of large-grain polycrystalline silicon thin-film transistors. Solid State Phenomena -Polycrystalline Semiconductors IV. -Materials, Technology, and Large Area Electronics. vol.80-81 p.367-372.

2000

Without Type

Angelis C. T, Dimitriadis C. A, Farmakis F. V, Brini J, Kamarinos G, Miyasaka M, Stoemenos I (2000). Transconductance of large grain excimer laser-annealed polycrystalline silicon thin film transistors. Solid-State Electronics. vol.44 no.6 p.1081-1087.
Angelis C. T, Dimitriadis C. A, Farmakis F. V, Brini J, Kamarinos G, Miyasaka M (2000). Threshold voltage of excimer-laser-annealed polycrystalline silicon thin-film transistors. Applied Physics Letters. vol.76 no.17 p.2442-2444.
Angelis C. T, Dimitriadis C. A, Farmakis F. V, Brini J, Kamarinos G, Gueorguiev V. K, Ivanov Tz E (2000). Empirical relationship between low-frequency drain current noise and grain-boundary potential barrier height in high-temperature-processed polycrystalline silicon thin-film transistors. Applied Physics Letters. vol.76 no.1 p.118-120.
Dimitriadis C. A, Miyasaka M (2000). Performance enhancement of offset gated polysilicon thin-film transistors. IEEE Electron Device Letters. vol.21 no.12 p.584-586.
Dimitriadis C. A, Kimura M, Miyasaka M, Inoue S, Farmakis F. V, Brini J, Kamarinos G (2000). Effect of grain boundaries on hot-carrier induced degradation in large grain polysilicon thin-film transistors. Solid-State Electronics. vol.44 no.11 p.2045-2051.
Dimitriadis C. A, Farmakis F. V, Brini J, Kamarinos G (2000). Dependence of the leakage current on the film quality in polycrystalline silicon thin-film transistors. Journal of Applied Physics. vol.88 no.5 p.2648-2651.
Dimitriadis C. A (2000). Gate bias instability in hydrogenated polycrystalline silicon thin-film transistors. Journal of Applied Physics. vol.88 no.6 p.3624-3628.
Dózsa L, Horváth Zs J, Molnár G. L, Petõ G, Dimitriadis C. A, Papadimitriou L, Brini J, Kamarinos G (2000). Electrical and low frequency noise properties of Gd and GdCo silicide contacts on n-type Si. Semiconductor Science and Technology. vol.15 no.7 p.653-657.
Evangelou E. K, Konofaos N, Aslanoglou X. A, Dimitriadis C. A, Patsalas P, Logothetidis S, Kokkoris M, Kossionides E, Vlastou R, Groetschel R (2000). Characterization of magnetron sputtering deposited thin films of TiN for use as a metal electrode on TiN/SiO2/Si metal-oxide-semiconductor devices. Journal of Applied Physics. vol.88 no.12 p.7192-7196.
Farmakis F. V, Brini J, Kamarinos G, Angelis C. T, Dimitriadis C. A, Miyasaka M, Ouisse T (2000). Grain and grain-boundary control of the transfer characteristics of large-grain polycrystalline silicon thin-film transistors. Solid-State Electronics. vol.44 no.6 p.913-916.
Gueorguiev V. K, Ivanov Tz E, Dimitriadis C. A, Popova L. I, Andreev S. K (2000). Electron trapping probabilities in hydrogen ion implanted silicon dioxide films thermally grown on polycrystalline silicon. Microelectronics Journal. vol.31 no.3 p.207-211.
Gueorguiev V. K, Ivanov Tz E, Dimitriadis C. A, Andreev S. K, Popova L. I (2000). Oxide field enhancement corrected time dependent dielectric breakdown of polyoxides. Microelectronics Journal. vol.31 no.8 p.663-666.
Hastas N. A, Dimitriadis C. A, Panayiotatos Y, Tassis D. H, Patsalas P, Logothetidis S (2000). Noise characterization of sputtered amorphous carbon films. Journal of Applied Physics. vol.88 no.9 p.5482-5484.
Lee J. I, Han I. K, Heo D. C, Brini J, Chovet A, Dimitriadis C. A, Jeong J. C (2000). Low frequency noise spectroscopy for Schottky contacts. Journal of the Korean Physical Society. vol.37 no.6 p.966-970.

1999

Without Type

Angelis C. T, Dimitriadis C. A, Miyasaka M, Farmakis F. V, Kamarinos G, Brini J, Stoemenos J (1999). Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors. Journal of Applied Physics. vol.86 no.8 p.4600-4606.
Angelis C. T, Dimitriadis Charalampos, Farmakis F. V, Kamarinos G, Brini J, Miyasaka M (1999). Electrical and noise properties of thin-film transistors on very thin excimer laser annealed polycrystalline silicon films. Applied Physics Letters. vol.74 no.24 p.3684-3686.
Angelis C. T, Dimitriadis C. A, Farmakis F. V, Brini J, Kamarinos G, Miyasaka M (1999). Dimension scaling of low frequency noise in the drain current of polycrystalline silicon thin-film transistors. Journal of Applied Physics. vol.86 no.12 p.7083-7086.
Angelis C. T, Dimitriadis C. A, Brini J, Kamarinos G, Gueorguiev V. K, Ivanov T. E (1999). Low-frequency noise spectroscopy of polycrystalline silicon thin-film transistors. Ieee Transactions on Electron Devices. vol.46 no.5 p.968-974.
Dimitriadis C. A, Lee J. I, Patsalas P, Logothetidis S, Tassis D. H, Brini J, Kamarinos G (1999). Characteristics of TiNx/n-Si Schottky diodes deposited by reactive magnetron sputtering. Journal of Applied Physics. vol.85 no.8 I p.4238-4242.
Dimitriadis C. A, Karakostas Th, Logothetidis S, Kamarinos G, Brini J, Nouet G (1999). Contacts of titanium nitride to n- and p-type gallium nitride films. Solid-State Electronics. vol.43 no.10 p.1969-1972.
Dimitriadis C. A, Kamarinos G, Brini J, Evangelou E. K, Gueorguiev V. K (1999). Avalanche-induced excess noise in polycrystalline silicon thin-film transistors. Applied Physics Letters. vol.74 no.1 p.108-110.
Dimitriadis C. A, Brini J, Lee J. I, Farmakis F. V, Kamarinos G (1999). 1/fγ noise in polycrystalline silicon thin-film transistors. Journal of Applied Physics. vol.85 no.7 p.3934-3936.
Farmakis F. V, Dimitriadis C. A, Brini J, Kamarinos G, Gueorguiev V. K, Ivanov Tz E (1999). Photon emission and related hot-carrier effects in polycrystalline silicon thin-film transistors. Journal of Applied Physics. vol.85 no.9 p.6917-6919.
Farmakis F. V, Dimitriadis C. A, Brini J, Kamarinos G, Gueorguiev V. K, Ivanov Tz (1999). Hot-carrier phenomena in high temperature processed undoped-hydrogenated n-channel polysilicon thin film transistors (TFTs). Solid-State Electronics. vol.43 no.7 p.1259-1266.
Farmakis F. V, Brini J, Kamarinos G, Mathieu N, Dimitriadis C. A (1999). A new method for the determination of the channel length reduction in polysilicon thin film transistors (TFTs). Thin Solid Films. vol.337 no.1-2 p.105-108.
Farmakis F. V, Brini J, Kamarinos G, Dimitriadis C. A, Gueorguiev V. K, Ivanov Tz E (1999). Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs). Microelectronics Reliability. vol.39 no.6-7 p.885-889.
Farmakis F. V, Brini J, Kamarinos G, Dimitriadis C. A, Gueorguiev V. K, Ivanov Tz E (1999). Electrical stress in N- and P-channel undoped-hydrogenated polysilicon thin film transistors (TFTs). Proceedings of the International Semiconductor Conference, CAS. vol.1 p.157-160.
Lee J. I, Brini J, Kamarinos G, Dimitriadis C. A, Logothetidis S, Patsalas P (1999). Low frequency noise measurements on TiN/n-Si Schottky diodes. Applied Surface Science. vol.142 no.1 p.390-393.
Lee J. I, Brini J, Chovet A, Dimitriadis C. A (1999). On 1/fγ noise in semiconductor devices. Solid-State Electronics. vol.43 no.12 p.2181-2183.
Lee J. I, Brini J, Chovet A, Dimitriadis C. A (1999). Flicker noise by random walk of electrons at the interface in nonideal Schottky diodes. Solid-State Electronics. vol.43 no.12 p.2185-2189.
Lee J. I, Brini J, Boussey J, Dimitriadis C. A (1999). Parameter extraction in non-ideal thermionic emission diodes. Applied Surface Science. vol.142 no.1 p.481-484.
Patsalas P, Charitidis C, Logothetidis S, Dimitriadis C. A, Valassiades O (1999). Combined electrical and mechanical properties of titanium nitride thin films as metallization materials. Journal of Applied Physics. vol.86 no.9 p.5296-5298.
Tassis D. H, Dimitriadis C. A, Polychroniadis E. K, Brini J, Kamarinos G (1999). Structural and trap properties of polycrystalline semiconducting FeSi2 thin films. Semiconductor Science and Technology. vol.14 no.11 p.967-974.
Tassis D. H, Dimitriadis C. A, Brini J, Kamarinos G, Birbas A (1999). Low-frequency noise in polycrystalline semiconducting FeSi2 thin films. Journal of Applied Physics. vol.85 no.8 I p.4091-4095.

Without Type

Dimitriadis Charalampos, Stoimenos Ioannis, Kamarinos G (1999). Electrical and noise properties of thin-film transistors on very thin excimer laser annealed polycrystalline silicon films. CAS 1999 Proceedings vol. 1, 1999 International Semiconductor Conference. International Semiconductor Conference, 1999. Sinaia - Romania. vol.1 p.173-176.
Patsalas P, Logothetidis S, Dimitriadis C. A (1999). In-situ optical characterization of titanium nitride thin films for applications in microelectronics. vol.569 p.113-118.

1998

Without Type

Dimitriadis C. A, Brini J, Kamarinos G, Gueorguiev V. K, Ivanov Tz E (1998). Conduction and low-frequency noise in high temperature processed polycrystalline silicon thin film transistors. Journal of Applied Physics. vol.83 no.3 p.1469-1475.
Dimitriadis C. A, Brini J, Kamarinos G, Ghibaudo G (1998). Characterization of low-pressure chemical vapor deposited polycrystalline silicon thin-film transistors by low-frequency noise measurements. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. vol.37 no.1 p.72-77.
Dimitriadis C. A, Brini J, Kamarinos G (1998). Low frequency noise in intrinsic low pressure chemical vapour deposited polysilicon resistors. EPJ Applied Physics. vol.3 no.3 p.283-285.
Farmakis F. V, Dimitriadis C. A, Brini J, Kamarinos G, Gueorguiev V. K, Ivanov Tz E (1998). Interface state generation during electrical stress in n-channel undoped hydrogenated polysilicon thin-film transistors. Electronics Letters. vol.34 no.24 p.2356-2357.
Farmakis F. V, Brini J, Mathieu N, Kamarinos G, Dimitriadis C. A, Logothetidis S (1998). Low frequency noise in Schottky barrier contacts of titanium nitride on n-type silicon. Semiconductor Science and Technology. vol.13 no.11 p.1284-1289.
Lee J. I, Brini J, Dimitriadis C. A (1998). Simple parameter extraction method for non-ideal Schottky barrier diodes. Electronics Letters. vol.34 no.12 p.1268-1269.
Tassis D. H, Dimitriadis C. A, Valassiades O (1998). The Meyer-Neldel rule in the conductivity of polycrystalline semiconducting FeSi2 films. Journal of Applied Physics. vol.84 no.5 p.2960-2962.
Tassis D. H, Dimitriadis C. A, Brini J, Kamarinos G, Angelakeris M, Flevaris N (1998). Low frequency noise in β-FeSi2/n-Si heterojunctions. Applied Physics Letters. vol.72 no.6 p.713-715.

1997

Without Type

Angelis C. T, Dimitriadis C. A, Samaras I, Brini J, Kamarinos G, Gueorguiev V. K, Ivanov Tz E (1997). Study of leakage current in n-channel and p-channel polycrystalline silicon thin-film transistors by conduction and low frequency noise measurements. Journal of Applied Physics. vol.82 no.8 p.4095-4101.
Dimitriadis C. A, Brini J, Kamarinos G (1997). Low-frequency noise of the leakage current in undoped low-pressure chemical vapor deposited polycrystalline silicon thin-film transistors. Applied Physics Letters. vol.70 no.7 p.880-882.
Dimitriadis C. A (1997). Grain boundary potential barrier inhomogeneities in low-pressure chemical vapor deposited polycrystalline silicon thin-film transistors. Ieee Transactions on Electron Devices. vol.44 no.9 p.1563-1565.
Tassis D. H, Dimitriadis C. A, Boultadakis S, Arvanitidis J, Ves S, Kokkou S, Logothetidis S, Valassiades O, Poulopoulos P, Flevaris N. K (1997). Influence of conventional furnace and rapid thermal annealing on the quality of polycrystalline β-FeSi2 thin films grown from vapor-deposited Fe/Si multilayers. Thin Solid Films. vol.310 no.1-2 p.115-122.

Without Type

1996

Without Type

Dimitriadis C. A, Tassis D. H (1996). On the threshold voltage and channel conductance of polycrystalline silicon thin-film transistors. Journal of Applied Physics. vol.79 no.8 p.4431-4437.
Tassis D. H, Mitsas C. L, Zorba T. T, Dimitriadis C. A, Valassiades O, Siapkas D. I, Angelakeris M, Poulopoulos P, Flevaris N. K, Kiriakidis G (1996). Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi 2 thin films. Journal of Applied Physics. vol.80 no.2 p.962-968.
Tassis D. H, Mitsas C. L, Zorba T. T, Angelakeris M, Dimitriadis C. A, Valassiades O, Siapkas D. I, Kiriakidis G (1996). Optical and electrical characterization of high quality β-FeSi2 thin films grown by solid phase epitaxy. Applied Surface Science. vol.102 p.178-183.

Without Type

Gaiseanu F, Kruger D, Stoemenos J, Dimitriadis C. A, Postolache C, Richter H, Schroter W, Seibt M (1996). Doping-restructuration process during phosphorus diffusion in polysilicon layers on silicon. vol.2 p.421-424.
Gaiseanu F, Dimitriadis C. A, Stoemenos J, Postolache C, Angelis C (1996). Structural modifications of the thick polysilicon layers on silicon during phosphorus diffusion: contributing mechanisms. vol.1 p.61-64.

1995

Without Type

Dimitriadis C. A, Tassis D. H (1995). Output characteristics of short-channel polycrystalline silicon thin-film transistors. Journal of Applied Physics. vol.77 no.5 p.2177-2183.
Dimitriadis C. A, Logothetidis S, Alexandrou I (1995). Schottky barrier contacts of titanium nitride on n-type silicon. Applied Physics Letters. p.502.
Dimitriadis C. A (1995). Subthreshold slope in polycrystalline silicon thin-film transistors and effect of the gate oxide on the subthreshold characteristics. Applied Physics Letters. vol.67 p.3738.
Dimitriadis Charalabos A, Coxon Penelope A, Economou Nicolaos A (1995). Leakage current of undoped LPCVD polycrystalline silicon thin-film transistors. Ieee Transactions on Electron Devices. vol.42 no.5 p.950-956.

1994

Without Type

Dimitriadis C. A, Tassis D. H, Economou N. A, Giakoumakis G (1994). Influence of deposition pressure on the bulk and interface states in low pressure chemical vapor deposited polycrystalline silicon thin-film transistors. Applied Physics Letters. vol.64 no.20 p.2709-2711.
Dimitriadis C. A, Stoemenos J, Coxon P. A, Friligkos S, Antonopoulos J, Economou N. A (1994). Effect of pressure on the growth of the crystallites of low pressure chemical vapour deposited polycrystalline silicon films and the effective electron mobility under high normal field in thin film transistors. Acta Physica Hungarica. vol.74 no.1-2 p.155-160.

1993

Without Type

Dimitriadis C. A, Tassis D. H, Economou N. A, Lowe A. J (1993). Determination of bulk states and interface states distributions in polycrystalline silicon thin-film transistors. Journal of Applied Physics. vol.74 no.4 p.2919-2924.
Dimitriadis C. A, Stoemenos J, Coxon P. A, Friligkos S, Antonopoulos J, Economou N. A (1993). Effect of pressure on the growth of crystallites of low-pressure chemical-vapor-deposited polycrystalline silicon films and the effective electron mobility under high normal field in thin-film transistors. Journal of Applied Physics. vol.73 no.12 p.8402-8411.
Dimitriadis C. A, Coxon P. A, Economou N. A (1993). Influence of deposition pressure on the output characteristics of low pressure chemical vapor deposited polycrystalline silicon thin-film transistors. Applied Physics Letters. vol.63 no.7 p.943-945.
Dimitriadis C. A (1993). Grain boundary trap distribution in polycrystalline silicon thin-film transistors. Journal of Applied Physics. vol.73 no.8 p.4086-4088.
Evangelou E. K, Papadimitriou L, Dimitriades C. A, Giakoumakis G. E (1993). Extraction of Schottky diode (and p-n junction) parameters from I-V characteristics. Solid-State Electronics. vol.36 no.11 p.1633-1635.
Evangelou E. K, Giakoumakis G. E, Dimitriadis C. A (1993). Deep levels in β-FeSi2/n-Si heterojunctions. Solid State Communications. vol.86 no.5 p.309-312.

1992

Without Type

Dimitriadis Charalabos A, Coxon Penelope A, Dozsa Laszlo, Papadimitriou Leonidas, Economou Nicolaos (1992). Performance of thin-film transistors on polysilicon films grown by low-pressure chemical vapor deposition at various pressures. Ieee Transactions on Electron Devices. vol.39 no.3 p.598-606.

1991

Without Type

Dimitriadis C. A, Polychroniadis E. K, Evangelou E. K, Giakoumakis G. E (1991). Morphology of platinum silicide films prepared by conventional and rapid thermal annealing and deep levels induced in silicon. Journal of Applied Physics. vol.70 no.6 p.3109-3114.
Dimitriadis C. A, Economou N. A, Coxon P. A (1991). Field-effect conductance activation energy in an undoped polycrystalline silicon thin-film transistor. Applied Physics Letters. vol.59 no.2 p.172-174.
Dimitriadis C. A (1991). Electrical properties of β-FeSi2/Si heterojunctions. Journal of Applied Physics. vol.70 no.10 p.5423-5426.
Dimitriadis Charalabos A, Coxon P. A, Lowe A. J, Stoemenos J, Economou N. A (1991). Control of the performance of polysilicon thin-film transistor by high-gate-voltage stress. Electron device letters. vol.12 no.12 p.676-678.
Valassiades O, Dimitriadis C. A, Werner J. H (1991). Galvanomagnetic behavior of semiconducting FeSi2 films. Journal of Applied Physics. vol.70 no.2 p.890-893.

1990

Without Type

Dimitriadis C. A, Werner J. H, Logothetidis S, Stutzmann M, Weber J, Nesper R (1990). Electronic properties of semiconducting FeSi 2 films. Journal of Applied Physics. vol.68 no.4 p.1726-1734.
Dimitriadis C. A, Werner J. H (1990). Growth mechanism and morphology of semiconducting FeSi2 films. Journal of Applied Physics. vol.68 no.1 p.93-96.
Dimitriadis C. A (1990). Experimental study of self-heating in undoped polycrystalline silicon thin films. Journal of Applied Physics. vol.68 no.2 p.862-864.
Dimitriadis C. A (1990). Effect of conventional and rapid thermal annealing on platinum silicide Schottky barrier diodes. Applied Physics Letters. vol.56 no.2 p.143-145.

1989

Without Type

Dimitriadis C. A, Coxon P. A (1989). Effects of temperature and electrical stress on the performance of thin-film transistors fabricated from undoped low-pressure chemical vapor deposited polycrystalline silicon. Applied Physics Letters. vol.54 no.7 p.620-622.
Papadimitriou L, Dimitriadis C. A, Dozsa L, Andor L (1989). Deep trap levels in cuprous oxide. Solid State Electronics. vol.32 no.6 p.445-448.

1988

Without Type

Dimitriadis C. A, Papadimitriou L, Stoemenos J, Economou N. A, Meakin D. B, Coxon P. A (1988). Conduction in n +-i-n + thin-film polycrystalline/ silicon devices in relation to the film deposition conditions. Journal of Applied Physics. vol.63 no.4 p.1104-1110.
Dimitriadis C. A, Papadimitriou L, Dozsa L, Coxon P. A (1988). Electrical properties of polysilicon n+-i-p junctions. Semiconductor Science and Technology. vol.3 no.6 p.558-563.
Dimitriadis C. A, Coxon P. A (1988). Hopping conduction in undoped low-pressure chemically vapor deposited polycrystalline silicon films in relation to the film deposition conditions. Journal of Applied Physics. vol.64 no.3 p.1601-1604.
Papadimitriou L, Dimitriadis C. A, Dozsa L (1988). Trap centers in cuprous oxide. Solid State Electronics. vol.31 no.10 p.1477-1482.

1987

Without Type

Dimitriadis C. A (1987). Transient photoconductivity analysis near a grain boundary of polycrystalline semiconductors. Solid State Communications. vol.64 no.6 p.851-854.

1986

Without Type

Dimitriadis C. A, Alexandrou A, Economou N. A (1986). Electrical properties of polycrystalline silicon layers under solar illumination. Journal of Applied Physics. vol.60 no.10 p.3651-3655.
Dimitriadis C. A (1986). Short-circuit current of polycrystalline silicon solar cells with respect to grain size and grain-boundary recombination velocity. Journal of Applied Physics. vol.59 no.2 p.660-662.
Dimitriadis C. A (1986). Effect of doping concentration on the performance of large-grain polycrystalline silicon solar cell. Journal of Applied Physics. vol.59 no.6 p.2259-2261.
Dimitriadis Charalabos A, Valassiades Odysseas, Papadimitriou Leonidas, Economou Nicolaos A (1986). DETERMINATION OF DIFFUSION LENGTH AND GRAIN BOUNDARY RECOMBINATION VELOCITY BY LASER EXCITATION. Ieee Transactions on Electron Devices. vol.ED-33 no.11 p.1780-1784.
Dimitriadis Charalabos A (1986). EVALUATION OF GRAIN BOUNDARY RECOMBINATION VELOCITY IN POLYCRYSTALLINE SILICON FROM THE SPECTRAL RESPONSE OF SCHOTTKY-BARRIER SOLAR CELLS. Ieee Transactions on Electron Devices. vol.ED-33 no.11 p.1806-1808.

1985

Without Type

Dimitriadis C. A (1985). The mobility of polycrystalline semiconductors under optical illumination. Journal of Physics D: Applied Physics. vol.18 no.11 p.2241-2246.
Dimitriadis C. A (1985). Influence of grain boundary recombination velocity and grain size on the minority carrier lifetime in polycrystalline semiconductors. Solid State Communications. vol.56 no.11 p.925-927.
Dimitriadis C. A (1985). Influence of dislocations on the performance of solar cells made from large-grain polysilicon. Journal of Physics D: Applied Physics. vol.18 no.12 p.2489-2495.
Dimitriadis Charalabos A (1985). SCANNING-ELECTRON- OR LIGHT-BEAM-INDUCED CURRENT METHOD FOR DETERMINATION OF GRAIN BOUNDARY RECOMBINATION VELOCITY IN POLYCRYSTALLINE SEMICONDUCTORS. Ieee Transactions on Electron Devices. vol.ED-32 no.9 p.1761-1765.

1984

Without Type

Dimitriadis C. A (1984). Temperature dependence of the hole lifetime in n-type GaP. Solid State Communications. vol.52 no.3 p.279-281.
Dimitriadis C. A (1984). Recombination efficiency of single dislocations in GaP. Solid State Communications. vol.49 no.12 p.1111-1112.

Without Type

Valassiades O. E, Dimitriades C. A, Papadimitriou L, Komninou Ph, Karakostas Th, Chrissafis K. J, Economou N. A (1984). ELECTRICAL CHARACTERISTICS OF SPECIFIC GRAIN BOUNDARIES IN POLYCRYSTALLINE Si. p.1043-1047.

1983

Without Type

Dimitriadis C. A, Papadimitriou L, Economou N. A (1983). Resistivity dependence of the minority carrier diffusion length in in single crystals of Cu2O. Journal of Materials Science Letters. vol.2 no.11 p.691-693.
Dimitriadis C. A (1983). Determination of surface recombination velocity in semiconductor layers by light excitation of Schottky barriers. Journal of Physics D: Applied Physics. vol.16 no.7 p.1303-1306.
Dimitriadis C. A (1983). Carrier recombination at dislocations in epitaxial gallium phosphide layers. Solid State Electronics. vol.26 no.7 p.633-637.

1982

Without Type

Ioannou Dimitris E, Dimitriadis Charalabos A (1982). SEM-EBIC MINORITY-CARRIER DIFFUSION-LENGTH MEASUREMENT TECHNIQUE. Ieee Transactions on Electron Devices. vol.ED-29 no.3 p.445-450.

1981

Without Type

Dimitriadis C. A (1981). Determination of bulk diffusion length in thin semiconductor layers by SEM-EBIC. Journal of Physics D: Applied Physics. vol.14 no.12 p.2269-2274.

1978

Without Type

Dimitriadis C. A, Huang E, Davidson S. M (1978). SEM cathodoluminescence studies of dislocation recombination in GaP. Solid State Electronics. vol.21 no.11-12 p.1419-1423.

1977

Without Type

Ioannou D. E, Dimitriadis C. A, Davidson S. M (1977). USE OF SCHOTTKY BARRIERS IN SEM-EBIC STUDIES OF SEMICONDUCTORS. Inst Phys Conf Ser. no.36 p.255-258.

Mis à jour: 2018-07-01