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Curriculum Vitae

Alkyoni Mantzari

Laboratory Teaching Staff, School of Physics

Personal Information

- 2310998092
am@auth.gr
Scopus ID22635195400

Course Work

Courses of Winter semester of 2017–18 academic year

	TMĪMA FYSIKĪS
ΗΥΥ501	Applied Informatics Laboratory
ΣΥΥ501	Structure of Materials Laboratory

Courses of Spring semester of 2017–18 academic year

	TMĪMA FYSIKĪS
ΗΥΥ501	Applied Informatics Laboratory
ΣΥΥ501	Structure of Materials Laboratory

Theses Supervised

Student Theses within AUTh

No results were found.

Publications

2012

Without Type

Mantzari A, Andreadou A, Marinova M, Polychroniadis E. K (2012). Some recent results on the 3C-SiC structural defects. Acta Physica Polonica A. vol.121 no.1 p.187-189.
Marinova M, Mantzari A, Andreadou A, Polychroniadis E. K (2012). On the polytypic transformations in SiC. Journal of Nano Research. vol.18-19 p.89-96.
Sun J. W, Robert T, Andreadou A, Mantzari A, Jokubavicius V, Yakimova R, Camassel J, Juillaguet S, Polychroniadis E. K, Syväjärvi M (2012). Shockley-Frank stacking faults in 6H-SiC. Journal of Applied Physics. vol.111 no.11.

Without Type

Marinova M, Andreadou A, Mantzari A, Polychroniadis E. K (2012). On the twin boundary propagation in (111) 3C-SiC layers. 14th International Conference on Silicon Carbide and Related Materials. Cleveland. vol.717-720 p.419-422.

2011

Without Type

Galben-Sandulache I. G, Marinova M, Mantzari Alkyoni, Sun G. L, Andreadou Ariadni, Chaussende D, Polychroniadis Efstathios (2011). Quality investigation of 3C-SiC crystals grown by CF-PVT technique. Materials Science Forum : Silicon Carbide and Related Materials 2010. 8th European Conference on Silicon Carbide and Related Materials. Oslo. vol.679-680 p. 20-23.
Marinova M, Mantzari A, Sun J. W, Lorenzzi J, Andreadou A, Zoulis G, Juillaguet S, Ferro G, Camassel J, Polychroniadis E. K (2011). Structural and optical investigation of VLS grown (111) 3C-SiC layers on 6H-SiC substrates in Sn-based melts. 8th European Conference on Silicon Carbide and Related Materials. Oslo. vol.679-680 p.165-168.
Marinova M, Andreadou A, Sun J. W, Lorenzzi J, Mantzari A, Zoulis G, Jegenyes N, Juillaguet S, Soulière V, Ferro G, Camassel J, et al (2011). Influence of post-growth annealing on the defects nature and distribution in VLS grown (111) 3C-SiC layers. 8th European Conference on Silicon Carbide and Related Materials. Oslo. vol.679-680 p.241-244.
Stanciu S. G, Coltuc D, Stanciu G. A, Andreadou A, Mantzari A, Polychroniadis E. K (2011). Automatic estimation of stacking fault density in SiC specimens imaged by transmission electron microscopy.

2010

Without Type

Vasiliauskas R, Marinova M, Syväjärvi M, Mantzari A, Andreadou A, Polychroniadis E. K, Yakimova R (2010). Sublimation epitaxy of cubic silicon carbide in vacuum. Journal of Physics: Conference Series. vol.223 no.1.

Without Type

Andreadou A, Marinova M, Mantzari A, Bensely A, Lorenzzi J, Ferro G, Polychroniadis E. K (2010). TEM investigation of the influence of the Ga-doping on the structure of 3C-SiC layers grown on 6H-SiC substrate by VLS mechanism. vol.1292 p.59-62.
Jegenyes N, Marinova M, Zoulis G, Lorenzzi J, Andreadou A, Mantzari A, Soulière V, Juillaguet S, Camassel J, Polychroniadis E. K, Ferro G (2010). Influence of the C/Si ratio on the dopant concentration and defects in CVD grown 3C-SiC homoepitaxial layers. vol.1292 p.31-34.
Mantzari A, Marinova M, Andreadou A, Mercier F, Galben-Sandulache I. G, Frangis N, Chaussende D, Polychroniadis E. K (2010). On the microstructure and the polytype transformation in 3C-SiC crystals grown by LPE on (001) substrates at different growth conditions. vol.1292 p.79-82.
Marinova M, Zoulis G, Robert T, Mercier F, Mantzari A, Galben I, Kim-Hak O, Lorenzzi J, Juillaguet S, Chaussende D, Ferro G, et al (2010). TEM and LTPL investigations of 3C-SiC layers grown by LPE on (100) and (111) 3C-SiC seeds. 13th International Conference on Silicon Carbide and Related Materials 2009. Nurnberg. vol.645-6648 p.383-386.
Marinova M, Mantzari A, Polychroniadis E. K (2010). Some recent results on the 3C-SiC structural defects. 2nd International Conference on Nanostructured Materials, Thin Films and Hard Coatings for Advanced Applications. Sozopol. vol.159 p.39-48.
Marinova M, Mantzari A, Beshkova M, Syväjäuvi M, Yakimo R, Polychroniadis E. K (2010). The influence of the temperature gradient on the defect structure of 3C-SiC grown heteroepitaxially on 6H-SiC by sublimation epitaxy. 13th International Conference on Silicon Carbide and Related Materials. Nurnberg. vol.645-6648 p.367-370.
Marinova M, Mantzari A, Beshkova M, Syväjärvi M, Yakimova R, Polychroniadis E. K (2010). TEM investigation of the 3C/6H-SiC transformation interface in layers grown by Sublimation Epitaxy. 21st Conference on Applied Crystallography. Zakopane. vol.163 p.97-100.
Marinova M, Jegenyés N, Andreadou A, Mantzari A, Lorenzzi J, Ferro G, Polychroniadis E. K (2010). Defects in (111) 3C-SiC layers grown at different temperatures by VLS and CVD on 6H-SiC substrates. vol.1292 p.95-98.
Vasiliauskas R, Marinova M, Syväjärvi M, Mantzari A, Andreadou A, Lorenzzi J, Ferro G, Polychroniadis E. K, Yakimova R (2010). Sublimation growth and structural characterization of 3C-SiC on hexagonal and cubic SiC seeds. 13th International Conference on Silicon Carbide and Related Materials 2009. Nurnberg. vol.645-6648 p.175-178.

2009

Without Type

Marinova M, Zoulis G, Robert T, Mercier F, Mantzari A, Galben I, Kim-Hak O, Lorenzzi J, Juillaguet S, Chaussende D, Ferro G, et al (2009). Defect-induced polytype transformations in LPE grown SiC epilayers on (1 1 1) 3C-SiC seeds grown by VLS on 6H-SiC. Physica B: Condensed Matter. vol.404 no.23-24 p.4727-4730.
Marinova M, Mercier F, Mantzari A, Galben I, Chaussende D, Polychroniadis E. K (2009). A TEM study of in-grown stacking faults in 3C-SiC layers grown by CF-PVT on 4H-SiC substrates. Physica B: Condensed Matter. vol.404 no.23-24 p.4749-4751.

Without Type

Mantzari A, Mercier F, Soueidan M, Chaussende D, Ferro G, Polychroniadis E. K (2009). Structural characterization of CF-PVT grown bulk 3C-SiC. 12th International Conference on Silicon Carbide and Related Materials. Otsu. vol.600-603 p.67-70.
Mantzari A, Lioutas C. B, Polychroniadis E. K (2009). A TEM study of inversion domain boundaries annihilation mechanism in 3C-SiC during growth. 7th European Conference on Silicon Carbide and Related Materials. Barcelona. vol.615 617 p.331-334.
Marinova M, Beshkova M, Mantzari A, Syvajarvi M, Yakimova R, Polychroniadis E. K (2009). TEM study of 3C-SiC layers grown by sublimation epitaxy on 6H-SiC substrates. Proceedings of the International workshop on 3C-SiC hetero-epitaxy (Hetero SiC 09). Catania, Italy. p.19-20.

2008

Without Type

Chaussende D, Mercier F, Boulle A, Conchon F, Soueidan M, Ferro G, Mantzari A, Andreadou A, Polychroniadis E. K, Balloud C, Juillaguet S, et al (2008). Prospects for 3C-SiC bulk crystal growth. Journal of Crystal Growth. vol.310 no.5 p.976-981.

2006

Without Type

Eid J, Santailler J. L, Ferrand B, Ferret P, Pesenti J, Basset A, Passero A, Mantzari A, Polychroniadis E. K, Balloud C, Soares P, et al (2006). Growth of cubic silicon carbide crystals from solution. Materials Science Forum. vol.527-529 p.123-126.

Without Type

Mantzari A, Lioutas C. B, Polychroniadis E. K, Schoner A (2006). On the reduction of structural defects in 3C-SiC during growth. Proceedings of the 16th International Microscopy Congress. Sapporo, Japan. p.1470.

2005

Without Type

Mantzari A, Polychroniadis E. K, Wollweber J, Freudenberg A, Balloud C, Camassel J (2005). Defect status near the SiC/substrate interface: Investigation of the first stage of the growth by physical vapour transport. Journal of Crystal Growth. vol.275 no.1-2 p.e1813-e1819.

Without Type

Polychroniadis E. K, Mantzari A, Freudenberg A, Wollweber J, Nitschke R, Frank T, Pensl G, Schöner A (2005). PVT-growth and characterization of single crystalline 3C-SiC on a (0001) 6H-SiC substrate. 5th European Conference on Silicon Carbide and Related Materials. Istanbul. vol.483-485 p.319-322.

2004

Without Type

Wollweber J, Mantzari A, Polychroniadis E. K, Balloud C, Freudenberg A, Nitschke R, Camassel J (2004). Stable parameter range for 3C-SiC sublimation growth on graphite. 10th International Conference on Silicon Carbide and Related Materials. vol.457-460 p.143-146.

2002

Without Type

Angelakeris Mavroeidis, Poulopoulos P, Vouroutzis Nikolaos, Mantzari Alkyoni, Karambeti K, Kalaitzidis Vasileios, Valasiadis Odyssefs, Flevaris Nikolaos (2002). Influence of Pt-doping on structural, magnetic and magneto transport properties of granular Ag-Co multilayers. Journal of Magnetism and Magnetic Materials. vol.240 no.1-3 p.488-490.

Aggiornato: 2018-08-19

Μονάδα Διασφάλισης Ποιότητας Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης

Tu sei qui

Curriculum Vitae

Alkyoni Mantzari

Courses of Winter semester of 2017–18 academic year

Courses of Spring semester of 2017–18 academic year

Student Theses within AUTh

Without Type

Without Type

Without Type

Without Type

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Μονάδα Διασφάλισης Ποιότητας
Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης