Course Content (Syllabus)
p-n junction: Tecnology of semiconductor devices, energy bands-electrostatic parameters, space charge region in thermal equilibrium and external bias, capacitance of the junction, I-V characteristics under forward and reverse bias.
Transistor MOS: Space charge regions of MOS devices, MOS capacitor, threshold voltage, static characteristics, conductance-transconductance, equivalent circuit, frequency cut-off, effect of substrate bias, fabrication of MOS devices.
Submicron transistor MOS: Experimental transfer and output characteristics, secondary phainomena (channel length modulation, drain induced barrier lowering, effect of geometry on threshold voltage), effect of normal electric field on the mobility, saturation velocity, hot-carrier effects, snapback breakdown, transistor LDD.
CMOS technology: transistor of n-well and p-well, latch-up phenomenon (parasitic bipolar transistor).
Experimental extraction of the parameters of MOSFET: Methodology, experimental application.
FET model for SPICE.
p-n junction, transistor MOSFET, secondary phenomena, CMOS, parameters extraction, SPICE models