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Dimitrios Tassis

Assistant Professor, School of Physics

Personal Information

dtassis's picture

- 2310998086
dtassis@auth.gr
Scopus ID6603597934
Γνωστικό Αντικείμενο:
ΗΛΕΚΤΡΟΝΙΚΕΣ ΙΔΙΟΤΗΤΕΣ ΗΜΙΑΓΩΓΩΝ ΚΑΙ ΗΜΙΑΓΩΓΙΚΕΣ ΔΙΑΤΑΞΕΙΣ
Επιστημονική Ειδίκευση: Φυσική

Education

Προπτυχιακές Σπουδές

1990	Πτυχίο, BSc Τμήμα Φυσικής / Φυσικομαθηματική Σχολή Ιωαννίνων Greece

Μεταπτυχιακές Σπουδές

1993	MEng School of Electronic and Electrical Engineering / Faculty of Engineering University of Leeds Great Britain Radio Communications and High Frequency Engineering

Διδακτορικό Δίπλωμα

2000	PhD Τμήμα Φυσικής / Σχολή Θετικών Επιστημών Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης Greece

Course Work

Courses of Winter semester of 2018–19 academic year

	TMĪMA FYSIKĪS
ΗΥΥ501	Applied Informatics Laboratory
ΣΥΕ206	Physics and technology of semiconductor devices

	METAPTYCΗIAKO TMĪMATOS FYSIKĪS
ΜΦΥ654	MATERIALS CHARACTERIZATION TECHNIQUES: THEORY AND LABORATORY

Courses of Spring semester of 2018–19 academic year

	METAPTYCΗIAKO TMĪMATOS FYSIKĪS
ΜΦΥ781	MATERIALS CHARACTERIZATION LABORATORY II

Theses Supervised

Student Theses within AUTh

In progress

Stefanakis Dionysios. "Ανάπτυξη νανομετρικών τρανζίστορ εγκαρσίου πεδίου από καρβίδιο του πυριτίου (SiC)", Εξειδίκευση σε: "Ανάπτυξη μικρομετρικών τρανζίστορ εγκαρσίου πεδίου από καρβίδιο του πυριτίου (SiC)"
Louris Evangelos. "Κατασκευή και βελτιστοποίηση οργανικών ενδύσιμων ηλεκτρονικών διατάξεων και κυκλωμάτων σε υποστρώματα υφασμάτων με διαφορετικές δομές"

2018–2019

Dimkou Ioanna. "Προσομοίωση οργανικών τρανζίστορ λεπτού υμενίου με εργαλεία TCAD"

2017–2018

Alepidis Miltiadis. "Μελέτη των UTBB FD-SOI MOSFET τρανζίστορ με μεθόδους προσομοίωσης TCAD"

2015–2016

Oproglidis Theodoros. "Βελτιστοποίηση νανο-τρανζίστορ πολλαπλής πύλης χωρίς ετεροεπαφές (Junctionless FinFETs) και σύγκριση με συμβατικά FinFET με την βοήθεια προσμοιώσεων"
Tsiara Artemisia. "Simulation of nanoscale triple gate FinFETs, with TCAD tools - A comparative study"

2013–2014

Karatsori Theano. Ανάλυση - Πρόβλεψη της Μεταβλητότητας Τρανζιστορ FinFET Νανοκλίμακας
Sidiropoulou Panagiota. Μελέτη των παρασιτικών χωρητικοτήτων σε τρανζίστορ FinFET τριών πυλών χωρίς προσμίξεις ή χαμηλής συγκέντρωσης προσμίξεων

Research Projects

2013–2014

ΔΡΑΣΗ Β: Ενίσχυση νέων ερευνητών στη βαθμίδα του επίκουρου καθηγητή:Βελτιστοποίηση της δομής "γεφυρωμένων κρυσταλλιτών (Bridged Grain:BG)" σε τρανζίστορ λεπτών υμενίων πολυκρυσταλλικού πυριτίου πύλης (DG-MOSFET)

Publications

2014

Journal Article

Fasarakis N, Karatsori T.A, Tassis Dimitrios, Theodorou Georgios, Andrieu F, Faynot O, Ghibaudo G, Dimitriadis Charalampos (2014). Analytical modeling of threshold voltage and interface ideality factor of nanoscale ultrathin body and buried oxide SOI MOSFETs with back gate control. IEEE Transactions on Electron Devices.
Fasarakis N, Karatsori T.A, Tsormpatzoglou A, Tassis Dimitrios, Papathanasiou Konstantinos, Bucher M, Ghibaudo G, Dimitriadis Charalampos (2014). Compact modeling of nanoscale trapezoidal finFETs. IEEE Transactions on Electron Devices.

Conference Proceedings Article

Tassis Dimitrios, Messaris I, Fasarakis N, Nikolaidis Spyridon, Ghibaudo G, Dimitriadis Charalampos (2014). Variability analysis-Prediction method for nanoscale triple gate FinFETs. 29th International Conference on Microelectronics, MIEL 2014.

2013

Conference Proceedings Article

Fasarakis N, Tassis Dimitrios, Tsormpatzoglou A, Papathanasiou Konstantinos, Dimitriadis Charalampos, Ghibaudo G (2013). Compact modeling of nano-scale trapezoidal cross-sectional FinFETs. 2013 IEEE International Semiconductor Conference Dresden - Grenoble.
Tassis Dimitrios, Fasarakis N, Dimitriadis Charalampos, Ghibaudo G (2013). Variability analysis - Prediction method for nanoscale triple gate FinFETs. 2013 IEEE International Semiconductor Conference Dresden - Grenoble.

2012

Journal Article

Fasarakis N, Tsormpatzoglou A, Tassis D. H, Pappas I, Papathanasiou K, Bucher M, Ghibaudo G, Dimitriadis C. A (2012). Compact model of drain current in short-channel triple-gate FinFETs. Ieee Transactions on Electron Devices. vol.59 no.7 p.1891-1898.
Fasarakis Nikolaos, Tsormpatzoglou Andreas, Tassis Dimitrios, Pappas Ilias, Papathanasiou Konstantinos, Bucher M, Ghibaudo G, Dimitriadis Charalampos (2012). Compact Capacitance Model of Undoped or Lightly Doped Ultra-Scaled Triple-Gate FinFETs. Ieee Transactions on Electron Devices. vol.59 no.12 p.3306-3312.
Papathanasiou K, Theodorou C. G, Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Bucher M, Ghibaudo G (2012). Symmetrical unified compact model of short-channel double-gate MOSFETs. Solid-State Electronics. vol.69 p.55-61.
Tsormpatzoglou A, Pappas I, Tassis D. H, Dimitriadis C. A, Ghibaudo G (2012). Analytical threshold voltage model for short-channel asymmetrical dual-gate material double-gate MOSFETs. Microelectronic Engineering. vol.90 p.9-11.
Tsormpatzoglou A, Papathanasiou K, Fasarakis N, Tassis D. H, Ghibaudo G, Dimitriadis C. A (2012). A Lambert-Function Charge-Based Methodology for Extracting Electrical Parameters of Nanoscale FinFETs. Ieee Transactions on Electron Devices. vol.59 no.12 p.3299-3305.

Conference Proceedings Article

Fasarakis N, Tsormpatzoglou A, Tassis D. H, Pappas I, Papathanasiou K, Dimitriadis C. A (2012). Analytical compact modeling of nanoscale triple-gate FinFETs. p.72-75.

2011

Journal Article

Fasarakis N, Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Papathanasiou K, Jomaah J, Ghibaudo G (2011). Analytical unified threshold voltage model of short-channel FinFETs and implementation. Solid-State Electronics.
Ioannidis Eleftherios G, Tsormpatzoglou A, Tassis D. H, Dimitriadis Charalampos, Ghibaudo G, Jomaah J (2011). Effect of localized interface charge on the threshold voltage of short-channel undoped symmetrical double-gate MOSFETs. Ieee Transactions on Electron Devices. vol.58 no.2 p.433-440.
Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Ghibaudo G, Collaert N, Pananakakis G (2011). Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs. Solid-State Electronics. vol.57 no.1 p.31-34.

2010

Journal Article

Ioannidis Elefhterios G, Tsormpatzoglou A, Tassis D. H, Dimitriadis Charalampos, Templier F, Kamarinos G (2010). Characterization of traps in the gate dielectric of amorphous and nanocrystalline silicon thin-film transistors by 1/f noise. Journal of Applied Physics. vol.108 no.10.
Ioannidis Eleftherios G, Theodorou C. G, Tsormpatzoglou A, Tassis D. H, Papathanasiou K, Dimitriadis Charalampos, Jomaah J, Ghibaudo G (2010). Analytical low-frequency noise model in the linear region of lightly doped nanoscale double-gate metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics. vol.108 no.6.
Tassis D. H, Tsormpatzoglou A, Dimitriadis C. A, Ghibaudo G, Pananakakis G, Collaert N (2010). Source/drain optimization of underlapped lightly doped nanoscale double-gate MOSFETs. Microelectronic Engineering. vol.87 no.11 p.2353-2357.
Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Ghibaudo G, Pananakakis G, Collaert N (2010). Analytical modelling for the current-voltage characteristics of undoped or lightly-doped symmetric double-gate MOSFETs. Microelectronic Engineering. vol.87 no.9 p.1764-1768.

Conference Proceedings Article

Pappas I, Tassis D, Siskos S, Dimitriadis C. A (2010). Characteristics of double-gate polycrystalline silicon thin-film transistors for AMOLED pixel design. International Conference on Electronics, Circuits, and Systems. Athens, Greece. p.301-304.

2009

Journal Article

Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Mouis M, Ghibaudo G, Collaert N (2009). Electrical characterization and design optimization of FinFETs with a TiN/HfO2 gate stack. Semiconductor Science and Technology. vol.24 no.12.
Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Ghibaudo G, Pananakakis G, Clerc R (2009). A compact drain current model of short-channel cylindrical gate-all-around MOSFETs. Semiconductor Science and Technology. vol.24 no.7.

2008

Journal Article

Arpatzanis N, Hatzopoulos A. T, Tassis D. H, Dimitriadis C. A, Templier F, Oudwan M, Kamarinos G (2008). Degradation of n-channel a-Si:H/nc-Si:H bilayer thin-film transistors under DC electrical stress. Microelectronics Reliability. vol.48 no.4 p.531-536.
Hatzopoulos A. T, Tassis D. H, Arpatzanis N, Dimitriadis C. A, Templier F, Oudwan M, Kamarinos G (2008). Stability of n -channel a-Si:Hnc-Si:H bilayer thin-film transistors under dynamic stress. Journal of Applied Physics. vol.103 no.8.

2007

Journal Article

Arpatzanis N, Tassis D. H, Dimitriadis C. A, Charitidis C, Song J. D, Choi W. J, Lee J. I (2007). Current-voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots. Semiconductor Science and Technology. vol.22 no.10 p.1086-1091.
Hatzopoulos A. T, Arpatzanis N, Tassis D. H, Dimitriadis C. A, Templier F, Oudwan M, Kamarinos G (2007). Stability of amorphous-silicon and nanocrystalline silicon thin-film transistors under DC and AC stress. IEEE Electron Device Letters. vol.28 no.9 p.803-805.
Hatzopoulos A. T, Arpatzanis N, Tassis D. H, Dimitriadis C. A, Templier F, Oudwan M, Kamarinos G (2007). Effect of channel width on the electrical characteristics of amorphous/ nanocrystalline silicon bilayer thin-film transistors. Ieee Transactions on Electron Devices. vol.54 no.5 p.1265-1269.
Hatzopoulos A. T, Arpatzanis N, Tassis D. H, Dimitriadis C. A, Templier F, Oudwan M, Kamarinos G (2007). 1/f noise characterization of amorphous/nanocrystalline silicon bilayer thin-film transistors. Solid-State Electronics. vol.51 no.5 p.726-731.
Hatzopoulos A. T, Arpatzanis N, Tassis D. H, Dimitriadis C. A, Oudwan M, Templier F, Kamarinos G (2007). Study of the drain leakage current in bottom-gated nanocrystalline silicon thin-film transistors by conduction and low-frequency noise measurements. Ieee Transactions on Electron Devices. vol.54 no.5 p.1076-1082.

2006

Journal Article

Arpatzanis N, Tassis D. H, Dimitriadis C. A, Zekentes K, Camara N (2006). Experimental investigation of noise in 4H-SiC p+-n-n+ junctions. Semiconductor Science and Technology. vol.21 no.5 p.591-593.
Hatzopoulos A. T, Tassis D. H, Arpatzanis N, Dimitriadis C. A, Kamarinos G (2006). Effects of hot carriers in offset gated polysilicon thin-film transistors. Microelectronics Reliability. vol.46 no.2-4 p.311-316.
Hatzopoulos A. T, Pappas I, Tassis D. H, Arpatzanis N, Dimitriadis C. A, Templier F, Oudwan M (2006). Analytical current-voltage model for nanocrystalline silicon thin-film transistors. Applied Physics Letters. vol.89 no.19.
Hatzopoulos A. T, Arpatzanis N, Tassis D. H, Dimitriadis C. A, Templier F, Oudwan M, Kamarinos G (2006). Electrical and noise characterization of bottom-gated nanocrystalline silicon thin-film transistors. Journal of Applied Physics. vol.100 no.11.
Pappas I, Hatzopoulos A. T, Tassis D. H, Arpatzanis N, Siskos S, Dimitriadis C. A, Kamarinos G (2006). A simple and continuous polycrystalline silicon thin-film transistor model for SPICE implementation. Journal of Applied Physics. vol.100 no.6.
Tassis D. H, , Arpatzanis N, Dimitriadis C. A, Kamarinos G (2006). Dynamic hot-carrier induced degradation in n-channel polysilicon thin-film transistors. Microelectronics Reliability. vol.46 no.12 p.2032-2037.
Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Kamarinos G, Frigeri P, Franchi S, Gombia E, Mosca R (2006). Noise spectroscopy of localized states in Au/n-GaAs Schottky diodes containing InAs quantum dots. Solid-State Electronics. vol.50 no.3 p.340-344.
Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Frigeri P, Franchi S, Gombia E, Mosca R (2006). Stress-induced local trap levels in Au/n-GaAs Schottky diodes with embedded InAs quantum dots. IEEE Electron Device Letters. vol.27 no.5 p.320-322.
Tsormpatzoglou A, Tassis D. H, Dimitriadis C. A, Dózsa L, Galkin N. G, Goroshko D. L, Polyarnyi V. O, Chusovitin E. A (2006). Deep levels in silicon Schottky junctions with embedded arrays of Β-FeSi2 nanocrystallites. Journal of Applied Physics. vol.100 no.7.

Conference Proceedings Article

Arpatzanis N, Hatzopoulos A. T, Tassis D. H, Dimitriadis C. A, Kamarinos G (2006). Hot carrier effects in self-aligned and offset-gated polysilicon thin-film transistors. vol.888 p.353-358.
Pappas I, Hatzopoulos A. T, Tassis D. H, Arpatzanis N, Siskos S, Chatzopoulos Alkiviadis, Dimitriadis Charalampos, Kamarinos G (2006). A simple polysilicon thin-film transistor SPICE model. 25th International Conference on Microelectronics (MIEL 2006). Belgrade, Serbia. p.513-516.

2005

Journal Article

Hatzopoulos A. T, Tassis D. H, Hastas N. A, Dimitriadis C. A, Kamarinos G (2005). On-state drain current modeling of large-grain poly-si TFTs based on carrier transport through latitudinal and longitudinal grain boundaries. Ieee Transactions on Electron Devices. vol.52 no.8 p.1727-1733.
Hatzopoulos A. T, Tassis D. H, Hastas N. A, Dimitriadis C. A, Kamarinos G (2005). An analytical hot-carrier induced degradation model in polysilicon TFTs. Ieee Transactions on Electron Devices. vol.52 no.10 p.2182-2186.
Hatzopoulos A. T, Tassis D. H, Dimitriadis C. A, Kamarinos G (2005). Analytical on-state current model of polycrystalline silicon thin-film transistors including the kink effect. Applied Physics Letters. vol.87 no.6.
Hatzopoulos A. T, Tassis D. H, Hastas N. A, Dimitriadis Charalampos, Siskos S, Hatzopoulos A. A (2005). A simple and continuous on-state current model of polysilicon thin-film transistors for circuit simulation. Journal of Physics: Conference Series. vol.10 no.1 p.27-30.
Koutsouras D. A, Hastas N. A, Tassis D. H, Dimitriadis C. A, Frigeri P, Franchi S, Gombia E, Mosca R (2005). Depth distribution of traps in Aun-GaAs Schottky diodes with embedded InAs quantum dots. Journal of Applied Physics. vol.97 no.6 p.1-6.
Tassis D. H, Hastas N. A, Dimitriadis C. A, Kamarinos G (2005). Improved analysis of low frequency noise in polycrystalline silicon thin-film transistors. Solid-State Electronics. vol.49 no.3 p.513-515.
Tsormpatzoglou A, Hastas N. A, Tassis D. H, Dimitriadis C. A, Kamarinos G, Frigeri P, Franchi S, Gombia E, Mosca R (2005). Low-frequency noise spectroscopy in Au/n-GaAs Schottky diodes with InAs quantum dots. Applied Physics Letters. vol.87 no.16 p.1-3.

2004

Journal Article

Hastas N. A, Tassis D. H, Dimitriadis C. A, Dozsa L, Franchi, Frigeri P (2004). Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots. Semiconductor Science and Technology. vol.19 no.3 p.461-467.

2003

Journal Article

Hastas N. A, Tassis D. H, Dimitriadis C. A, Kamarinos G (2003). Determination of interface and bulk traps in the subthreshold region of polycrystalline silicon thin-film transistors. Ieee Transactions on Electron Devices. vol.50 no.9 p.1991-1994.
Hastas N. A, Tassis D. H, Dimitriadis C. A, Brini J, Kamarinos G (2003). Stability of hydrogenated in pure hydrogen plasma p-channel polycrystalline silicon thin-film transistors. Solid-State Electronics. vol.47 no.1 p.25-31.

2002

Journal Article

Hastas N. A, Dimitriadis C. A, Panayiotatos Y, Tassis D. H, Logothetidis S, Papadimitriou D, Roupakas G, Adamopoulos G (2002). High-field transport and noise properties of sputter-deposited amorphous carbon-silicon heterojunctions. Semiconductor Science and Technology. vol.17 no.7 p.662-667.

2001

Journal Article

Hastas N. A, Dimitriadis C. A, Tassis D. H, Panayiotatos Y, Logothetidis S, Papadimitriou D (2001). Electrical properties of magnetron sputtered amorphous carbon films with sequential sp(3)-rich/sp(2)-rich layered structure. Applied Physics Letters. vol.79 no.20 p.3269-3271.
Hastas N. A, Dimitriadis C. A, Tassis D. H, Logothetidis S (2001). Electrical characterization of nanocrystalline carbon-silicon heterojunctions. Applied Physics Letters. vol.79 no.5 p.638-640.
Hastas N. A, Dimitriadis C. A, Patsalas P, Panayiotatos Y, Tassis D. H, Logothetidis S (2001). Structural, electrical, and low-frequency-noise properties of amorphous-carbon-silicon heterojunctions. Journal of Applied Physics. vol.89 no.5 p.2832-2838.

2000

Journal Article

Hastas N. A, Dimitriadis C. A, Panayiotatos Y, Tassis D. H, Patsalas P, Logothetidis S (2000). Noise characterization of sputtered amorphous carbon films. Journal of Applied Physics. vol.88 no.9 p.5482-5484.

1999

Journal Article

Dimitriadis C. A, Lee J. I, Patsalas P, Logothetidis S, Tassis D. H, Brini J, Kamarinos G (1999). Characteristics of TiNx/n-Si Schottky diodes deposited by reactive magnetron sputtering. Journal of Applied Physics. vol.85 no.8 I p.4238-4242.
Tassis D. H, Dimitriadis C. A, Polychroniadis E. K, Brini J, Kamarinos G (1999). Structural and trap properties of polycrystalline semiconducting FeSi2 thin films. Semiconductor Science and Technology. vol.14 no.11 p.967-974.
Tassis D. H, Dimitriadis C. A, Brini J, Kamarinos G, Birbas A (1999). Low-frequency noise in polycrystalline semiconducting FeSi2 thin films. Journal of Applied Physics. vol.85 no.8 I p.4091-4095.

1998

Journal Article

Tassis D. H, Dimitriadis C. A, Valassiades O (1998). The Meyer-Neldel rule in the conductivity of polycrystalline semiconducting FeSi2 films. Journal of Applied Physics. vol.84 no.5 p.2960-2962.
Tassis D. H, Dimitriadis C. A, Brini J, Kamarinos G, Angelakeris M, Flevaris N (1998). Low frequency noise in β-FeSi2/n-Si heterojunctions. Applied Physics Letters. vol.72 no.6 p.713-715.

1997

Journal Article

Tassis D. H, Dimitriadis C. A, Boultadakis S, Arvanitidis J, Ves S, Kokkou S, Logothetidis S, Valassiades O, Poulopoulos P, Flevaris N. K (1997). Influence of conventional furnace and rapid thermal annealing on the quality of polycrystalline β-FeSi2 thin films grown from vapor-deposited Fe/Si multilayers. Thin Solid Films. vol.310 no.1-2 p.115-122.

1996

Journal Article

Dimitriadis C. A, Tassis D. H (1996). On the threshold voltage and channel conductance of polycrystalline silicon thin-film transistors. Journal of Applied Physics. vol.79 no.8 p.4431-4437.
Tassis D. H, Mitsas C. L, Zorba T. T, Dimitriadis C. A, Valassiades O, Siapkas D. I, Angelakeris M, Poulopoulos P, Flevaris N. K, Kiriakidis G (1996). Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi 2 thin films. Journal of Applied Physics. vol.80 no.2 p.962-968.
Tassis D. H, Mitsas C. L, Zorba T. T, Angelakeris M, Dimitriadis C. A, Valassiades O, Siapkas D. I, Kiriakidis G (1996). Optical and electrical characterization of high quality β-FeSi2 thin films grown by solid phase epitaxy. Applied Surface Science. vol.102 p.178-183.

1995

Journal Article

Dimitriadis C. A, Tassis D. H (1995). Output characteristics of short-channel polycrystalline silicon thin-film transistors. Journal of Applied Physics. vol.77 no.5 p.2177-2183.

1994

Journal Article

Dimitriadis C. A, Tassis D. H, Economou N. A, Giakoumakis G (1994). Influence of deposition pressure on the bulk and interface states in low pressure chemical vapor deposited polycrystalline silicon thin-film transistors. Applied Physics Letters. vol.64 no.20 p.2709-2711.

1993

Journal Article

Dimitriadis C. A, Tassis D. H, Economou N. A, Lowe A. J (1993). Determination of bulk states and interface states distributions in polycrystalline silicon thin-film transistors. Journal of Applied Physics. vol.74 no.4 p.2919-2924.

Updated: 2018-10-30